DRAM Module, 1MX9, 100ns, CMOS, SIMM-30
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Hitachi （Renesas ） |
| Parts packaging code | SIMM |
| package instruction | , SIP30,.2 |
| Contacts | 30 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | PAGE |
| Maximum access time | 100 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O type | COMMON |
| JESD-30 code | R-XSMA-T30 |
| JESD-609 code | e0 |
| memory density | 9437184 bit |
| Memory IC Type | DRAM MODULE |
| memory width | 9 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 30 |
| word count | 1048576 words |
| character code | 1000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 1MX9 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| Encapsulate equivalent code | SIP30,.2 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 1024 |
| Maximum seat height | 20.574 mm |
| Maximum standby current | 0.009 A |
| Maximum slew rate | 0.54 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| HB56A19A-10 | HB56A19B-12 | HB56A19A-12 | HB56A19B-10 | HB56A19A-15 | HB56A19B-15 | |
|---|---|---|---|---|---|---|
| Description | DRAM Module, 1MX9, 100ns, CMOS, SIMM-30 | DRAM Module, 1MX9, 120ns, CMOS, SIMM-30 | DRAM Module, 1MX9, 120ns, CMOS, SIMM-30 | DRAM Module, 1MX9, 100ns, CMOS, SIMM-30 | DRAM Module, 1MX9, 150ns, CMOS, SIMM-30 | DRAM Module, 1MX9, 150ns, CMOS, SIMM-30 |
| Maker | Hitachi （Renesas ） | Hitachi （Renesas ） | Hitachi （Renesas ） | Hitachi （Renesas ） | Hitachi （Renesas ） | Hitachi （Renesas ） |
| Parts packaging code | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM |
| package instruction | , SIP30,.2 | SIMM, SIM30 | , SIP30,.2 | SIMM, SIM30 | , SIP30,.2 | SIMM, SIM30 |
| Contacts | 30 | 30 | 30 | 30 | 30 | 30 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE |
| Maximum access time | 100 ns | 120 ns | 120 ns | 100 ns | 150 ns | 150 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-XSMA-T30 | R-XSMA-N30 | R-XSMA-T30 | R-XSMA-N30 | R-XSMA-T30 | R-XSMA-N30 |
| memory density | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bi |
| Memory IC Type | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE |
| memory width | 9 | 9 | 9 | 9 | 9 | 9 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 30 | 30 | 30 | 30 | 30 | 30 |
| word count | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| character code | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 1MX9 | 1MX9 | 1MX9 | 1MX9 | 1MX9 | 1MX9 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Encapsulate equivalent code | SIP30,.2 | SIM30 | SIP30,.2 | SIM30 | SIP30,.2 | SIM30 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 |
| Maximum seat height | 20.574 mm | 20.447 mm | 20.574 mm | 20.447 mm | 20.574 mm | 20.447 mm |
| Maximum standby current | 0.009 A | 0.009 A | 0.009 A | 0.009 A | 0.009 A | 0.009 A |
| Maximum slew rate | 0.54 mA | 0.45 mA | 0.45 mA | 0.54 mA | 0.36 mA | 0.36 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
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