38D5 Group Standard Characteristics (Flash Memory Version)
M38D59FFFFP/HP
Standard Characteristics Example
Standard characteristics described below are just examples of the 38D5 Group's characteristics and are not guaranteed.
For rated values, refer to "38D5 Group Data sheet".
(1) Power Source Current Standard Characteristics Example (Vcc-Icc)
When system is operating in frequency/2 mode (ceramic oscillation, Ta = 25 °C, output transistor is in the cut-off state)
A/D conversion not executed
7.0
f(XIN) = 12 MHz
f(XIN) = 8 MHz
6.0
f(XIN) = 4 MHz
f(XIN) = 2 MHz
5.0
Power Source Current Icc [mA]
4.0
3.0
2.0
1.0
0.0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Power Source Voltage Vcc [V]
Fig. 1. Vcc-Icc (frequency/2 mode)
When system is operating in frequency/4 mode (ceramic oscillation, Ta = 25 °C, output transistor is in the cut-off state)
A/D conversion not executed
7.0
f(XIN)
f(XIN)
f(XIN)
f(XIN)
f(XIN)
= 16 MHz
= 12 MHz
= 8 MHz
= 4 MHz
= 2 MHz
6.0
Power Source Current Icc [mA]
5.0
4.0
3.0
2.0
1.0
0.0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Power Source Voltage Vcc [V]
Fig. 2. Vcc-Icc (frequency/4 mode)
When system is operating in frequency/8 mode (ceramic oscillation, Ta = 25 °C, output transistor is in the cut-off state)
A/D conversion not executed
7.0
f(XIN)
f(XIN)
f(XIN)
f(XIN)
f(XIN)
= 16 MHz
= 12 MHz
= 8 MHz
= 4 MHz
= 2 MHz
6.0
Power Source Current Icc [mA]
5.0
4.0
3.0
2.0
1.0
0.0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Power Source Voltage Vcc [V]
Fig. 3. Vcc-Icc (frequency/8)
REJ99B1344-0200
©2007. Renesas Technology Corp., All rights reserved.
November 2007
Page 1 of 26
38D5 Group Standard Characteristics (Flash Memory Version)
M38D59FFFFP/HP
At WIT instruction executed (ceramic oscillation, Ta = 25 °C, output transistor is in the cut-off state)
3.0
f(XIN)
f(XIN)
f(XIN)
f(XIN)
f(XIN)
= 16 MHz
= 12 MHz
= 8 MHz
= 4 MHz
= 2 MHz
2.5
Power Source Current Icc [mA]
2.0
1.5
1.0
0.5
0.0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Power Source Voltage Vcc [V]
Fig. 4. Vcc-Icc (at WIT instruction executed)
At STP instruction executed (Ta = 25 °C, output transistor is in the cut-off state)
1000
900
Power Source Current Icc [nA]
800
700
600
500
400
300
200
100
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Source Voltage Vcc [V]
Fig. 5. Vcc-Icc (at STP instruction executed)
REJ99B1344-0200
©2007. Renesas Technology Corp., All rights reserved.
November 2007
Page 2 of 26
38D5 Group Standard Characteristics (Flash Memory Version)
M38D59FFFFP/HP
At 12 MHz frequency/2, increment at A/D conversion executed (ceramic oscillation, Ta = 25 °C, output transistor is in the cut-off state)
7.0
A/D conversion executed
6.0
A/D conversion not executed
Power Source Current Icc [mA]
5.0
4.0
3.0
2.0
1.0
0.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Source Voltage Vcc [V]
Fig. 6. Vcc-Icc (increment at A/D conversion executed)
At 16 MHz frequency/4 mode, increment at A/D conversion executed (ceramic oscillation, Ta = 25 °C, output transistor is in the cut-off state)
7.0
A/D conversion executed
6.0
A/D conversion not executed
Power Source Current Icc [mA]
5.0
4.0
3.0
2.0
1.0
0.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Source Voltage Vcc [V]
Fig. 7. Vcc-Icc (increment at A/D conversion executed)
At 16 MHz frequency/8 mode, increment at A/D conversion executed (ceramic oscillation, Ta = 25 °C, output transistor is in the cut-off state)
7.0
A/D conversion executed
6.0
A/D conversion not executed
Power Source Current Icc [mA]
5.0
4.0
3.0
2.0
1.0
0.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Source Voltage Vcc [V]
Fig. 8. Vcc-Icc (increment at A/D conversion executed)
REJ99B1344-0200
©2007. Renesas Technology Corp., All rights reserved.
November 2007
Page 3 of 26
38D5 Group Standard Characteristics (Flash Memory Version)
M38D59FFFFP/HP
When system is operating in low-speed mode (crystal oscillation, ceramic oscillation stop, Ta = 25 °C, output transistor is in the cut-off state)
A/D conversion not executed
300
f(XCIN) = 32.768 kHz
Power Source Current Icc [μA]
250
200
150
100
50
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Source Voltage Vcc [V]
Fig. 9. Vcc-Icc (low-speed mode)
At WIT instruction executed (crystal oscillation, ceramic oscillation stop, Ta = 25 °C, output transistor is in the cut-off state)
10
f(XCIN) = 32.768 kHz
Power Source Current Icc [μA]
8
6
4
2
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Source Voltage Vcc [V]
Fig. 10. Vcc-Icc (at WIT instruction executed)
REJ99B1344-0200
©2007. Renesas Technology Corp., All rights reserved.
November 2007
Page 4 of 26
38D5 Group Standard Characteristics (Flash Memory Version)
M38D59FFFFP/HP
When system is operating in on-chip oscillator mode (external oscillation stop, output transistor is in the cut-off state)
A/D conversion not executed
700
Ta = -20 °C
Ta = 25 °C
Ta = 85°C
600
Power Source Current Icc [μA]
500
400
300
200
100
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Source Voltage Vcc [V]
Fig. 11. Vcc-Icc (on-chip oscillator mode)
On-chip oscillator operating mode, at WIT instruction executed (external oscillation stop, output transistor is in the cut-off state)
600
Ta = -20 °C
Ta = 25 °C
Ta = 85°C
500
Power Source Current Icc [μA]
400
300
200
100
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Source Voltage Vcc [V]
Fig. 12. Vcc-Icc (on-chip oscillator mode at WIT instruction executed)
REJ99B1344-0200
©2007. Renesas Technology Corp., All rights reserved.
November 2007
Page 5 of 26
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