PMBT4403-T datasheet, PDF - EEWORLD Datasheet

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PMBT4403-T: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size337KB，15 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com

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PMBT4403-T Overview

Small Signal Bipolar Transistor

PMBT4403-T Parametric

Parameter Name	Attribute value
Maker	Nexperia
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	350 ns
Maximum opening time (tons)	40 ns

PMBT4403-T Preview

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename

Nexperia.

Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use

http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com

(email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via

salesaddresses@nexperia.com).

Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

PMBT4403

5 March 2015

40 V, 600 mA, PNP switching transistor

Product data sheet

1. General description

PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)

plastic package.

NPN complement: PMBT4401

2. Features and benefits

•

Single general-purpose switching transistor

AEC-Q101 qualified

3. Applications

•

Switching and linear amplification

4. Quick reference data

Table 1.

Symbol

CEO

Quick reference data

Parameter

collector-emitter

voltage

collector current

DC current gain

= -2 V; I

= -150 mA; T

amb

= 25 °C

Conditions

open base

Min

100

Typ

Max

-40

-600

300

Unit

5. Pinning information

Table 2.

Pinning information

Symbol Description

base

emitter

collector

Simplified outline

Graphic symbol

sym132

TO-236AB (SOT23)

Scan or click this QR code to view the latest information for this product

NXP Semiconductors

PMBT4403

40 V, 600 mA, PNP switching transistor

6. Ordering information

Table 3.

Ordering information

Package

Name

PMBT4403

TO-236AB

Description

plastic surface-mounted package; 3 leads

Version

SOT23

Type number

7. Marking

Table 4.

Marking codes

Marking code

[1]

Type number

PMBT4403

[1]

%2T

% = placeholder for manufacturing site code

PMBT4403

All information provided in this document is subject to legal disclaimers.

Product data sheet

5 March 2015

2 / 14

NXP Semiconductors

PMBT4403

40 V, 600 mA, PNP switching transistor

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

CBO

CEO

EBO

tot

amb

stg

Parameter

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

peak collector current

peak base current

total power dissipation

junction temperature

ambient temperature

storage temperature

[1]

Conditions

open emitter

open base

open collector

Min

Max

-40

-5

-600

-800

-200

250

150

Unit

°C

single pulse; t

≤ 1 ms

amb

≤ 25 °C

[1]

-65

Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

300

tot

(mW)

200

(1)

aaa-014677

100

-75

-25

125

175

amb

(°C)

(1) FR4 PCB; standard footprint

Fig. 1.

Power derating curve

9. Thermal characteristics

Table 6.

Symbol

th(j-a)

Thermal characteristics

Parameter

thermal resistance

from junction to

ambient

Conditions

in free air

[1]

Min

Typ

Max

500

Unit

K/W

PMBT4403

All information provided in this document is subject to legal disclaimers.

Product data sheet

5 March 2015

3 / 14

NXP Semiconductors

PMBT4403

40 V, 600 mA, PNP switching transistor

[1]

(K/W)

duty cycle = 1

0.75

0.33

0.1

0.05

0.02

0.01

0.5

0.2

Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

aaa-014478

-5

-4

-3

-2

-1

(s)

Mounted on FR4 PCB; standard footprint.

Fig. 2.

Transient thermal impedance as a function of pulse time; typical values

PMBT4403

All information provided in this document is subject to legal disclaimers.

Product data sheet

5 March 2015

4 / 14

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PMBT4403-T Related Products

	PMBT4403-T	PMBT4403	PMBT4403T/R	PMBT4403/T3
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
Maker	Nexperia	Nexperia	Nexperia	Nexperia
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant	compliant
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A	0.6 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20	20
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz
Maximum off time (toff)	350 ns	350 ns	350 ns	350 ns
Maximum opening time (tons)	40 ns	40 ns	40 ns	40 ns
Is it Rohs certified?	-	conform to	conform to	conform to

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