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Datasheet> All Categories > Discrete semiconductor> The transistor> LS4393(TO-92)
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LS4393(TO-92)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size290KB，1 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

LS4393(TO-92) Overview

Transistor

LS4393(TO-92) Parametric

Parameter NameAttribute value
MakerMicross
package instruction,
Reach Compliance Codecompliant

LS4393(TO-92) Preview

LS4393
Single N-Channel JFET switch
Linear Systems replaces discontinued Siliconix PN4393
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX PN4393 
LOW ON RESISTANCE 
r
DS(on) 
≤ 100Ω 
LOW GATE OPERATING CURRENT 
I
D(off) 
= 5pA 
FAST SWITCHING 
t
(ON)
 ≤= 15ns 
LS4393 Benefits:
1
ABSOLUTE MAXIMUM RATINGS
 @ 25°C (unless otherwise noted) 
Low Error Voltage
Maximum Temperatures 
High-Speed Analog Circuit Performance
Storage Temperature 
‐65°C to +200°C 
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Operating Junction Temperature 
‐55°C to +200°C 
Eliminates Additional Buffering
Maximum Power Dissipation 
Continuous Power Dissipation  
350mW 
LS4393 Applications:
MAXIMUM CURRENT
Analog Switches
Gate Current (Note 1) 
I
G
 = 50mA 
Choppers,
Sample-and-Hold
MAXIMUM VOLTAGES 
Normally “On” Switches, Current Limiters
Gate to Drain Voltage /  Gate to Source Voltage 
‐40V 
LS4393 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BV
GSS
 
Gate to Source Breakdown Voltage 
‐40 
‐‐ 
‐‐ 
 
I
G 
= ‐1µA,   V
DS
 = 0V 
V 
V
GS(off)
 
Gate to Source Cutoff Voltage 
‐0.5 
‐‐ 
‐3 
V
DS
 = 20V, I
D
 = 1nA 
V
GS(F)
 
Gate to Source Forward Voltage 
‐‐ 
0.7 
1 
                   I
G 
=  1mA,   V
DS
 = 0V 
V
DS(on)
 
Drain to Source On Voltage 
‐‐ 
0.25 
0.4 
V
GS 
= 0V,   I
D
 = 3mA 
V
DS(on)
 
Drain to Source On Voltage 
‐‐ 
0.3 
‐‐ 
 
V
GS 
= 0V,   I
D
 = 6mA 
V
DS(on)
 
Drain to Source On Voltage 
‐‐ 
0.35 
‐‐ 
 
V
GS 
= 0V,   I
D
 = 12mA 
2
I
DSS
 
Drain to Source Saturation Current
 
5 
‐‐ 
60 
mA 
V
DS
 = 20V, V
GS 
= 0V 
I
GSS
 
Gate Reverse Current 
‐‐ 
‐5 
‐1000 
 
V
GS 
= ‐20V,  V
DS
 = 0V 
 
I
G
 
Gate Operating Current 
‐‐ 
‐5 
‐‐ 
V
DG 
= 15V,  I
D
 = 10mA 
pA 
 
‐‐ 
5 
100 
V
DS 
= 20V,   V
GS 
= ‐5V 
 
Drain Cutoff Current 
I
D(off)
 
‐‐ 
5 
‐‐ 
V
DS 
= 20V,   V
GS 
= ‐7V 
 
‐‐ 
5 
‐‐ 
V
DS 
= 20V,   V
GS 
= ‐12V 
r
DS(on)
 
Drain to Source On Resistance 
‐‐ 
‐‐ 
100 
Ω 
V
GS 
= 0V,   I
D
 = 1mA 
LS4393 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
TYP 
MIN 
MAX 
UNITS 
CONDITIONS 
The LS4393 features many of the superior
characteristics of JFETs which make it a good choice
for demanding analog switching applications and for
specialized amplifier circuits.
g
fs
 
g
os
 
r
ds(on)
 
C
iss
 
C
rss
 
C
rss
 
C
rss
 
e
n
 
SYMBOL 
t
d(on)
 
t
r
 
t
d(off)
 
t
f
 
Equivalent Input Noise Voltage 
CHARACTERISTIC 
 
Turn On Time 
 
Turn Off Time 
Click To Buy
Forward Transconductance 
Output Conductance 
Input Capacitance 
 
Reverse Transfer Capacitance 
6 
‐‐ 
‐‐ 
mS 
µS 
Ω 
 
 
pF 
25 
‐‐ 
12 
3.5 
3.4 
3.0 
3 
TYP 
2 
2 
6 
13 
‐‐ 
‐‐ 
Drain to Source On Resistance 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
MIN 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
100 
16 
5 
‐‐ 
‐‐ 
‐‐ 
MAX 
15 
5 
50 
30 
nV/√Hz 
UNITS 
 
 
ns 
 
CONDITIONS 
V
DS
 = 20V,  I
D
 = 1mA,  f = 1kHz 
V
DS
 = 20V,  I
D
 = 1mA,  f = 1kHz 
V
GS
 = 0V,  I
D
 = 0A,  f = 1kHz 
V
DS
 = 20V,   V
GS
 = 0V,  f = 1MHz 
V
DS
 = 0V,   V
GS
 = ‐5V,  f = 1MHz 
V
DS
 = 0V,   V
GS
 = ‐7V,  f = 1MHz 
V
DS
 = 0V,   V
GS
 = ‐12V,  f = 1MHz 
V
DS
 = 10V,  I
D
 = 10mA,  f = 1kHz 
LS4393 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
 
 
V
DD
 = 10V,   V
GS(H)
 = 0V 
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired 
             2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% 
LS4393 SWITCHING CIRCUIT PARAMETERS                                                                                                                                         SWITCHING CIRCUIT 
 
TO-92 (Bottom View)
R
L
 
3200Ω 
 
I
D(on)
 
3mA 
 
 
 
 
Available Packages:
 
 
 
LS4393 in TO-92
 
 
 
LS4393 in bare die.
 
 
 
Contact Micross for full package and die dimensions
 
 
 
V
GS(L)
 
‐5V 
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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