X2-Class HiPerFET
TM
Power MOSFET
IXFH80N65X2
IXFK80N65X2
V
DSS
I
D25
R
DS(on)
= 650V
= 80A
38m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
G
D
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
650
650
30
40
80
160
20
3
50
890
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
C
C
C
°C
°C
Nm/lb.in
g
g
TO-264P (IXFK)
G
D
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-247
TO-264P
300
260
1.13 / 10
6
10
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
650
3.5
5.0
V
V
High Power Density
Easy to Mount
Space Savings
Applications
100
nA
50
A
3 mA
38 m
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100673D(03/16)
IXFH80N65X2
IXFK80N65X2
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
R
Gi
C
iss
C
oss
C
rss
Effective Output Capacitance
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
R
thCS
0.21
0.15
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
280
1160
32
24
70
11
140
50
40
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.14
C/W
C/W
C/W
A1
c
b
b2
b4
e
+
O J M C AM
Characteristic Values
Min.
Typ.
Max
33
55
0.6
8300
5010
1.6
S
TO-247 Outline
D
A
A2
A2
E
Q
R
D
+
B
A
+
0P O 0K M D B M
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Gate Input Resistance
V
GS
= 0V, V
DS
= 25V, f = 1MHz
S
D2
+
D1
pF
pF
pF
L
L1
0P1
1
2
3
ixys option
C
4
E1
PINS: 1 - Gate
2, 4 - Drain
3 - Source
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3 (External)
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 40A, -di/dt = 100A/μs
V
R
= 100V
200
1.7
16.7
Characteristic Values
Min.
Typ.
Max
80
320
1.4
A
A
V
D
R1
1
2
3
L1
D2
4
TO-264P Outline
E
Q
R
Q1
D1
A
E1
ns
μC
A
c
b1
x2 e
b2
b
A
Terminals:
1 = Gate
2,4 = Drain
3 = Source
Note 1. Pulse test, t
300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFH80N65X2
IXFK80N65X2
Fig. 1. Output Characteristics @ T
J
= 25ºC
80
70
60
V
GS
= 10V
9V
8V
200
V
GS
= 10V
180
160
140
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
I
D
- Amperes
50
7V
40
30
20
10
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
8V
120
100
7V
80
60
6V
40
20
6V
5V
0
0
5
10
15
20
25
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
80
70
60
V
GS
= 10V
8V
3.8
3.4
3.0
Fig. 4. R
DS(on)
Normalized to I
D
= 40A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
- Amperes
50
40
30
20
10
7V
2.6
I
D
= 80A
2.2
1.8
1.4
1.0
0.6
I
D
= 40A
6V
5V
4V
0
0
1
2
3
4
5
6
7
8
0.2
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 40A Value vs.
Drain Current
4.5
4.0
3.5
V
GS
= 10V
1.3
1.2
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
BV
DSS
/ V
GS(th)
- Normalized
1.1
1.0
0.9
0.8
BV
DSS
R
DS(on)
- Normalized
T
J
= 125ºC
3.0
2.5
2.0
T
J
= 25ºC
1.5
1.0
0.5
0
20
40
60
80
100
120
140
160
180
200
V
GS(th)
0.7
0.6
0.5
-60
-40
-20
0
20
40
60
80
100
120
140
160
I
D
- Amperes
T
J
- Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
IXFH80N65X2
IXFK80N65X2
Fig. 7. Maximum Drain Current vs.
Case Temperature
90
80
70
60
100
90
80
70
Fig. 8. Input Admittance
I
D
- Amperes
I
D
- Amperes
60
50
40
30
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
T
J
= 125ºC
25ºC
- 40ºC
20
10
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
T
C
- Degrees Centigrade
V
GS
- Volts
Fig. 9. Transconductance
90
80
70
T
J
= - 40ºC
200
180
160
25ºC
140
Fig. 10. Forward Voltage Drop of Intrinsic Diode
g
f s
- Siemens
60
50
I
S
- Amperes
120
100
80
60
40
20
0
T
J
= 125ºC
T
J
= 25ºC
125ºC
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
I
D
- Amperes
V
SD
- Volts
Fig. 11. Gate Charge
10
V
DS
= 325V
I
G
= 10mA
100,000
Fig. 12. Capacitance
6
Capacitance - PicoFarads
8
I
D
= 40A
10,000
Ciss
V
GS
- Volts
1,000
Coss
4
100
2
10
f
= 1 MHz
0
0
20
40
60
80
100
120
140
1
1
10
100
Crss
1000
Q
G
- NanoCoulombs
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH80N65X2
IXFK80N65X2
Fig. 13. Output Capacitance Stored Energy
60
1000
R
DS(
on
)
Limit
50
100
25µs
100µs
10
Fig. 14. Forward-Bias Safe Operating Area
E
OSS
- MicroJoules
40
30
20
1
10
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
0.1
Fig. 15. Maximum Transient Thermal Impedance
100
200
300
400
500
600
10
100
10ms
1,000
I
D
- Amperes
1ms
0
1
0
V
DS
- Volts
V
DS
- Volts
Fig. 15. Maximum Transient Thermal Impedance
0.3
aaaaa
0.1
Z
(th)JC
- K / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2016 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_80N65X2(Z8-S602) 11-19-15
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