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NM93C46LM8X

Description
EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8
Categorystorage    storage   
File Size108KB,13 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Download Datasheet Parametric View All

NM93C46LM8X Overview

EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8

NM93C46LM8X Parametric

Parameter NameAttribute value
MakerRochester Electronics
package instructionSOP,
Reach Compliance Codeunknown
Other features40 YEARS OF DATA RETENTION
Maximum clock frequency (fCLK)0.25 MHz
Data retention time - minimum40
JESD-30 codeR-PDSO-G8
length4.9 mm
memory density1024 bit
Memory IC TypeEEPROM
memory width16
Number of functions1
Number of terminals8
word count64 words
character code64
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64X16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Maximum seat height1.75 mm
Serial bus typeMICROWIRE
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width3.9 mm
Maximum write cycle time (tWC)15 ms
NM93C46 1024-Bit Serial CMOS EEPROM
(MICROWIRE
TM
Synchronous Bus)
February 2000
NM93C46
1024-Bit Serial CMOS EEPROM
(MICROWIRE™ Synchronous Bus)
General Description
NM93C46 is a 1024-bit CMOS non-volatile EEPROM organized
as 64 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat-
ible to many of standard Microcontrollers and Microprocessors.
There are 7 instructions implemented on the NM93C46 for various
Read, Write, Erase, and Write Enable/Disable operations. This
device is fabricated using Fairchild Semiconductor floating-gate
CMOS process for high reliability, high endurance and low power
consumption.
“LZ” and “L” versions of NM93C46 offer very low standby current
making them suitable for low power applications. This device is
offered in both SO and TSSOP packages for small space consid-
erations.
Features
I
Wide V
CC
2.7V - 5.5V
I
Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I
No Erase instruction required before Write instruction
I
Self timed write cycle
I
Device status during programming cycles
I
40 year data retention
I
Endurance: 1,000,000 data changes
I
Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
Functional Diagram
CS
SK
DI
INSTRUCTION
REGISTER
V
CC
INSTRUCTION
DECODER
CONTROL LOGIC
AND CLOCK
GENERATORS
ADDRESS
REGISTER
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
DECODER
EEPROM ARRAY
16
READ/WRITE AMPS
16
V
SS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
© 2000 Fairchild Semiconductor International
NM93C46 Rev. E
1
www.fairchildsemi.com
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