UNISONIC TECHNOLOGIES CO., LTD
1N60
1.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
1
1
TO-92
Power MOSFET
DESCRIPTION
The UTC
1N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
SOT-223
1
TO-220
TO-220F
FEATURES
* R
DS(ON)
=11.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-251
1
TO-252
1
SYMBOL
2.Drain
TO-126
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
1N60L-x-AA3-R
1N60G-x-AA3-R
SOT-223
1N60L-x-T92-B
1N60G-x-T92-B
TO-92
1N60L-x-T92-K
1N60G-x-T92-K
TO-92
1N60L-x-TA3-T
1N60G-x-TA3-T
TO-220
1N60L-x-TF3-T
1N60G-x-TF3-T
TO-220F
1N60L-x-TM3-T
1N60G-x-TM3-T
TO-251
1N60L-x-TN3-R
1N60G-x-TN3-R
TO-252
1N60L-x-TN3-T
1N60G-x-TN3-T
TO-252
1N60L-x-T60-K
1N60G-x-T60-K
TO-126
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
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1 of 6
QW-R502-052,I
1N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
1N60-A
600
V
Drain-Source Voltage
V
DSS
1N60-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 1)
I
AR
1.2
A
Continuous Drain Current
I
D
1.2
A
Pulsed Drain Current (Note 1)
I
DM
4.8
A
Single Pulsed (Note 2)
E
AS
50
mJ
Avalanche Energy
Repetitive (Note 1)
E
AR
4.0
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
SOT-223
1
W
TO-251
28
W
TO-252
28
W
Power Dissipation
P
D
TO-220
40
W
TO-220F
21
W
TO-92(T
a
=25℃)
1
W
TO-126
12.5
W
Junction Temperature
T
J
+150
℃
℃
Operating Temperature
T
OPR
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SOT-223
TO-251
TO-252
TO-220
TO-220F
TO-92
TO-126
SOT-223
TO-251
TO-252
TO-220
TO-220F
TO-126
SYMBOL
RATINGS
150
110
110
62.5
62.5
140
132
14
4.53
4.53
3.13
5.95
10
UNIT
Junction-to-Ambient
θ
JA
℃/W
Junction-to-Case
θ
Jc
℃/W
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QW-R502-052,I
1N60
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
1N60-A
1N60-B
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
=0V, I
D
=250μA
V
DS
=600V, V
GS
=0V
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
Power MOSFET
MIN TYP MAX UNIT
600
650
10
100
-100
0.4
2.0
4.0
9.3 11.5
120 150
20
25
3.0 4.0
5
25
7
25
5.0
1.0
2.6
20
60
25
60
6.0
V
V
μA
nA
nA
V/℃
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Breakdown Voltage Temperature
△BV
DSS
/
△
T
J
I
D
=250μA
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=1.2A, R
G
=50Ω
(Note 4,5)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=1.2A
Gate-Source Charge
Q
GS
(Note 4,5)
Gate-Drain Charge
Q
GD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1.2A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=1.2A
dI
F
/dt=100A/μs (Note1)
Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
1.2A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
5. Essentially Independent of Operating Temperature
1.4
1.2
4.8
160
0.3
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QW-R502-052,I
1N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-052,I
1N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-052,I
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