2N7002G-AE2-R datasheet, PDF - EEWORLD Datasheet

2N7002G-AE2-R: Description300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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2N7002G-AE2-R Overview

300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.3 A
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	7.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	2N7002G-AE2-R	2N7002	2N7002L-AE2-R	2N7002_11
Description	300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236	300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236	300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of components	1	1	1	1
Number of terminals	3	3	3	3
surface mount	YES	YES	YES	Yes
Terminal form	GULL WING	FLAT	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	pair
transistor applications	SWITCHING	SWITCHING	SWITCHING	switch
Transistor component materials	SILICON	SILICON	SILICON	silicon
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-G3	-
Reach Compliance Code	compli	compli	compli	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	60 V	60 V	60 V	-
Maximum drain current (Abs) (ID)	0.3 A	0.115 A	0.3 A	-
Maximum drain current (ID)	0.3 A	0.115 A	0.3 A	-
Maximum drain-source on-resistance	7.5 Ω	7.5 Ω	7.5 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
Maximum feedback capacitance (Crss)	5 pF	5 pF	5 pF	-
JESD-30 code	R-PDSO-G3	R-PDSO-F3	R-PDSO-G3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	-

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