M29W040-100N1 datasheet, PDF - EEWORLD Datasheet

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M29W040-100N1: Description512KX8 FLASH 3V PROM, 100ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32; Categorystorage storage; File Size206KB，31 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M29W040-100N1 Overview

512KX8 FLASH 3V PROM, 100ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32

M29W040-100N1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	TSOP
package instruction	8 X 20 MM, PLASTIC, TSOP-32
Contacts	32
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	100 ns
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	18.4 mm
memory density	4194304 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	8
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Department size	64K
Maximum standby current	0.000005 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	8 mm

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M29W040

4 Mbit (512Kb x8, Uniform Block)

Low Voltage Single Supply Flash Memory

NOT FOR NEW DESIGN

M29W040 is replaced by the M29W040B

2.7V to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

FAST ACCESS TIME: 100ns

BYTE PROGRAMMING TIME: 12µs typical

ERASE TIME

– Block: 1.5 sec typical

– Chip: 2.5 sec typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Data Polling and Toggle bits Protocol for

P/E.C. Status

MEMORY ERASE in BLOCKS

– 8 Uniform Blocks of 64 KBytes each

– Block Protection

– Multiblock Erase

ERASE SUSPEND and RESUME MODES

LOW POWER CONSUMPTION

– Read mode: 8mA typical (at 12MHz)

– Stand-by mode: 20µA typical

– Automatic Stand-by mode

POWER DOWN SOFTWARE COMMAND

– Power-down mode: 1µA typical

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E3h

Table 1. Signal Names

A0-A18

DQ0-DQ7

Address Inputs

Data Input / Outputs

Chip Enable

Output Enable

Write Enable

Supply Voltage

Ground

PLCC32 (K)

TSOP32 (N)

8 x 20mm

TSOP32 (NZ)

8 x 14mm

Figure 1. Logic Diagram

VCC

A0-A18

DQ0-DQ7

M29W040

VSS

AI02074

November 1999

This is information on a product still in productionbut not recommended for new designs.

1/31

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