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3N80

Description
3 Amps, 800 Volts N-CHANNEL POWER MOSFET
File Size212KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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3N80 Overview

3 Amps, 800 Volts N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
3N80
3 Amps, 800 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
3N80
provide excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
=3.8Ω @V
GS
=10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 11 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Drain
Gate
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
Package
TO-220
TO-220F
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-283.D

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Description 3 Amps, 800 Volts N-CHANNEL POWER MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET N-channel TrenchMOS intermediate level FET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET
package instruction - FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Reach Compliance Code - compli - compli compli compli compli -
Avalanche Energy Efficiency Rating (Eas) - 170 mJ - 170 mJ 170 mJ 170 mJ 170 mJ -
Configuration - SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage - 800 V - 800 V 800 V 800 V 800 V -
Maximum drain current (ID) - 3 A - 3 A 3 A 3 A 3 A -
Maximum drain-source on-resistance - 4.2 Ω - 4.5 Ω 4.5 Ω 4.5 Ω 4.2 Ω -
FET technology - METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code - TO-220AB - TO-220AB TO-220AB TO-220AB TO-220AB -
JESD-30 code - R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
Number of components - 1 - 1 1 1 1 -
Number of terminals - 3 - 3 3 3 3 -
Operating mode - ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form - FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Polarity/channel type - N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) - 10 A - 10 A 10 A 10 A 10 A -
surface mount - NO - NO NO NO NO -
Terminal form - THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location - SINGLE - SINGLE SINGLE SINGLE SINGLE -
transistor applications - SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials - SILICON - SILICON SILICON SILICON SILICON -
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