UNISONIC TECHNOLOGIES CO., LTD
3N80
3 Amps, 800 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
3N80
provide excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
=3.8Ω @V
GS
=10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 11 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Drain
Gate
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
Package
TO-220
TO-220F
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-283.D
3N80
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V
GS
=0V)
V
DSS
800
V
Drain-Gate Voltage (R
G
=20kΩ)
V
DGR
800
V
Gate-Source Voltage
V
GSS
±30
V
Gate-Source Breakdown Voltage (I
GS
=±1mA)
BV
GSO
30(MIN)
V
Insulation Withstand Voltage (DC) TO-220F/ TO-220F1
V
ISO
2500
V
Avalanche Current (Note 2)
I
AR
3
A
Continuous Drain Current
I
D
3
A
Pulsed Drain Current
I
DM
10
A
Single Pulse Avalanche Energy (Note 3)
E
AS
170
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
70
Power Dissipation
P
D
W
TO-220F/ TO-220F1
25
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. starting T
J
=25 °C, I
D
=I
AR
, V
DD
=50V
4. I
SD
≦2.5A,
di/dt≦200A/μs, V
DD
≦BV
DSS
, T
J
≦T
J(MAX)
.
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220
TO-220F/ TO-220F1
TO-220
TO-220F/ TO-220F1
SYMBOL
θ
JA
θ
JC
RATING
62.5
62.5
1.78
5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance (Note 2)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
C
OSS(EQ)
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
DD
TEST CONDITIONS
V
GS
=0V, I
D
=250μA
V
DS
=800V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=1.5A
V
DS
=15V, I
D
=1.5A
MIN TYP MAX UNIT
800
1
±10
3
3.75
3.8
2.1
485
57
11
22
17
27
36
40
19
3.2
10.8
4.5
4.5
V
μA
μA
V
Ω
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
=25V, V
GS
=0V, f=1MHz
V
GS
=0V, V
DS
=0V~640V
V
DD
=400V, I
D
=3 A, R
G
=4.7Ω
V
GS
=10V
V
DD
=640V, I
D
=3A, V
GS
=10V
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2 of 6
QW-R502-283.D
3N80
ELECTRICAL CHARACTERISTICS(Cont.)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
V
SD
I
SD
=3A ,V
GS
=0V
1.6
V
Source-Drain Current
I
SD
2.5
A
Source-Drain Current (Pulsed)
I
SDM
10
A
Reverse Recovery Current
I
RRM
8.4
A
I
SD
=3A, di/dt=100A/μs,
Body Diode Reverse Recovery Time
t
RR
384
ns
V
DD
=50V, T
J
=25°C
1600
nC
Body Diode Reverse Recovery Charge
Q
RR
Note: 1.Pulse width=300μs, Duty cycle≦1.5%
Note:
2.C
OSS(EQ)
is defined as constant equivalent capacitance giving the same charging time as C
OSS
when V
DS
increases from 0to 80% V
DSS
.
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QW-R502-283.D
3N80
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
4 of 6
QW-R502-283.D
3N80
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-283.D
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