UNISONIC TECHNOLOGIES CO., LTD
3N70
3 AMPS, 700 VOLTS
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
3N70
is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
Power MOSFET
FEATURES
* R
DS(ON)
≤4.0Ω
@V
GS
= 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N70L-TM3-T
3N70G-TM3-T
3N70L-TN3-R
3N70G-TN3-R
Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
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QW-R502-282,D
3N70
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
3.0
A
Continuous Drain Current
I
D
3.0
A
Pulsed Drain Current (Note 2)
I
DM
12
A
Single Pulsed (Note 3)
E
AS
200
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
50
W
°С
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, I
AS
= 2.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤3.0A,
di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATING
110
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250μA
V
DS
= 700 V, V
GS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
0.6
2.0
2.8
350
50
5.5
10
30
20
30
10
2.7
4.9
4.0
4.0
450
65
32
40
70
100
70
13
MIN TYP MAX UNIT
700
10
100
-100
V
μA
nA
nA
V/°С
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
△
BV
DSS
/△T
J
I
D
= 250μA, Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
DD
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 1.5A
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
V
DD
= 30V, I
D
= 1.0 A, R
G
= 25Ω
(Note 1, 2)
V
DS
= 480V,I
D
= 3.0A, V
GS
= 10 V
(Note 1, 2)
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QW-R502-282,D
3N70
ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 3.0 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0 V, I
S
= 3.0 A,
Reverse Recovery Time
t
RR
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
Power MOSFET
1.4
3.0
12
210
1.2
V
A
A
ns
µC
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QW-R502-282,D
3N70
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-282,D
3N70
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
V
DS
V
GS
R
G
10%
t
D(ON)
t
R
Power MOSFET
V
DS
90%
10V
Pulse Width≤1μs
Duty Factor≤0.1%
D.U.T.
V
GS
t
D(OFF)
t
F
2A Switching Test Circuit
2B Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
Q
GS
Q
G
V
DS
V
GS
DUT
3mA
Q
GD
V
GS
Charge
3A Gate Charge Test Circuit
3B Gate Charge Waveform
4A Unclamped Inductive Switching Test Circuit
4B Unclamped Inductive Switching Waveforms
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QW-R502-282,D
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