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3N70G-TM3-T

Description
3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size277KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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3N70G-TM3-T Overview

3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET

3N70G-TM3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)200 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage700 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)12 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
3N70
3 AMPS, 700 VOLTS
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
3N70
is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
Power MOSFET
FEATURES
* R
DS(ON)
≤4.0Ω
@V
GS
= 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N70L-TM3-T
3N70G-TM3-T
3N70L-TN3-R
3N70G-TN3-R
Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-282,D

3N70G-TM3-T Related Products

3N70G-TM3-T 3N70L-TM3-T 3N70 3N70G-TN3-R 3N70L-TN3-R
Description 3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET 3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET 3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET 3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET 3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to conform to - conform to conform to
Parts packaging code TO-251 TO-251 - TO-252 TO-252
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 - 4 4
Reach Compliance Code compli compli - compli compli
Avalanche Energy Efficiency Rating (Eas) 200 mJ 200 mJ - 200 mJ 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 700 V 700 V - 700 V 700 V
Maximum drain current (ID) 3 A 3 A - 3 A 3 A
Maximum drain-source on-resistance 4 Ω 4 Ω - 4 Ω 4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251 TO-251 - TO-252 TO-252
JESD-30 code R-PSIP-T3 R-PSIP-T3 - R-PSSO-G2 R-PSSO-G2
Number of components 1 1 - 1 1
Number of terminals 3 3 - 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 12 A 12 A - 12 A 12 A
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount NO NO - YES YES
Terminal form THROUGH-HOLE THROUGH-HOLE - GULL WING GULL WING
Terminal location SINGLE SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON
Base Number Matches 1 1 - 1 1
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