UNISONIC TECHNOLOGIES CO., LTD
5N60
4.5 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC
5N60
is a high voltage MOSFET and is designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
Power MOSFET
1
TO-252
TO-251
1
TO-220
FEATURES
* R
DS(ON)
= 2.5Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( Typical 15 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 6.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
1
TO-220F
SYMBOL
2.Drain
1
TO-220F1
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N60L-x-TA3-T
5N60G-x-TA3-T
5N60L-x-TF3-T
5N60G-x-TF3-T
5N60L-x-TF1-T
5N60G-x-TF1-T
5N60L-x-TM3-T
5N60G-x-TM3-T
5N60L-x-TN3-T
5N60G-x-TN3-T
5N60L-x-TN3-R
5N60G-x-TN3-R
Package
TO-220
TO-220F
TO-220F1
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
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Tube
Tape Reel
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1 of 6
QW-R502-065,F
5N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
5N60-A
600
Drain-Source Voltage
V
DSS
V
5N60-B
650
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.5
A
Continuous Drain Current
I
D
4.5
A
Pulsed Drain Current (Note 2)
I
DM
18
A
Single Pulsed (Note 3)
E
AS
210
mJ
Avalanche Energy
10
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
100
W
P
D
Power Dissipation
36
TO-220F/TO-220F1
TO-251 / TO-252
54
°C
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L = 18.9mH, I
AS
= 4.5 A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
4.5A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220
Junction-to-Ambient
TO-220F/TO-220F1
TO-251 / TO-252
TO-220
Junction-to-Case
TO-220F/TO-220F1
TO-251 / TO-252
SYMBOL
θ
JA
RATINGS
62.5
62.5
160
1.25
3.47
2.3
UNIT
°C/W
θ
JC
°C/W
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QW-R502-065,F
5N60
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
5N60-A
5N60-B
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
=0V, I
D
= 250μA
V
GS
=0V, I
D
= 250μA
V
DS
=600V, V
GS
= 0V
V
GS
=30V, V
DS
= 0V
V
GS
=-30V, V
DS
= 0V
Power MOSFET
MIN TYP MAX UNIT
600
650
1
100
-100
0.6
2.0
2.0
515
55
6.5
10
42
38
46
15
2.5
6.6
4.0
2.5
670
72
8.5
30
90
85
100
19
V
μA
nA
V/°C
Breakdown Voltage Temperature
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25℃
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 2.25A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 300V, I
D
=4.5 A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 480 V, I
D
= 4.5A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.5 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 4.5 A,
d
IF
/ dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Note 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
1.4
4.5
18
300
2.2
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QW-R502-065,F
5N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-065,F
5N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-065,F
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