UNISONIC TECHNOLOGIES CO., LTD
5N80
Preliminary
Power MOSFET
5 Amps, 800 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
5N80
is a N-channel enhancement mode power
MOSFET. It use UTC advanced technology to provide avalanche
rugged technology and low gate charge.
It can be applied in high current, high speed switching, switch
mode power supplies (SMPS), consumer and industrial lighting,
DC-AC inverters for welding equipment and uninterruptible power
supply(UPS).
1
TO-220
1
TO-220F
FEATURES
* R
DS(on)
:1.8Ω (TYP.)
* Avalanche rugged technology
* Low input capacitance
* Low gate charge
* Application oriented characterization
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
5N80L-TA3-T
5N80G-TA3-T
TO-220
5N80L-TF3-T
5N80G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-483.b
5N80
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
GS
=0
V
DS
800
V
Gate-Source Voltage
V
GS
±30
V
Drain-Gate Voltage
R
GS
=20kΩ
V
DGR
800
V
Continuous
I
D
5.5
A
Drain Current (Continuous)
20
A
Pulsed (Note 2)
I
DM
Avalanche Energy
Single Pulsed (Note 3)
E
AS
320
mJ
TO-220
125
W
Power Dissipation
P
D
TO-220F
40
W
TO-220
1
Derating Factor
W/°C
TO-220F
0.32
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-65~150
°C
Notes : Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F
TO-220
Junction to Case
TO-220F
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
1
3.12
UNIT
°C/W
°C/W
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5N80
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
Gate- Source Leakage Current
Static Drain-Source On-State Resistance
On State Drain Current
Forward Transconductance (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Cross-Over Time
Turn-On Current Slope
Preliminary
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
I
D(ON)
g
FS
C
ISS
C
OSS
C
RSS
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
t
C
(di/dt)
on
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=Max Rating
V
DS
= Max Rating×0.8,
T
C
=125°C
V
GS
=+20V
V
GS
=-20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=2.5A
V
GS
=10V, I
D
=2.5A, T
C
=100°C
V
DS
>I
D(ON)
×R
DS(ON)
max,
V
GS
=10V
V
DS
>I
D(ON)
×R
DS(ON)
max, I
D
=2.5A
Power MOSFET
MIN
800
250
1000
+100
-100
3
1.8
5
2
4
1190
165
70
75
9
33
50
85
120
30
160
200
1450
200
85
95
5
2.6
4
µA
nA
nA
V
Ω
A
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
A/µs
TYP
MAX
UNIT
V
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
V
GS
=0V, V
DS
=25V, f=1.0MHz
V
GS
=10V, V
DD
=500V, I
D
=6A
V
DD
=400V, I
D
=2.5A, R
G
=50Ω
V
GS
=10V (See test circuit, Fig. 3)
V
DD
=640V, I
D
=5.5A, R
G
=50Ω
V
GS
=10V (See test circuit, Fig. 5)
65
105
150
40
200
V
DD
=640V, I
D
=5.5A, R
G
=50Ω
V
GS
=10V (See test circuit, Fig. 5)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
SD
=5.5A, V
GS
=0V
(Note 1)
Reverse Recovery Time
t
RR
I
SD
=5.5A,dI/dt=100A/µs,
V
DD
=80V,T
J
=150°C
Reverse Recovery Charge
Q
RR
(See test circuit, Fig. 5)
Reverse Recovery Current
I
RRM
Source-Drain Current
I
SD
Source-Drain Current (Pulsed)
I
SDM
(Note 1)
Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%.
2. Pulse width limited by safe operating area.
3. Starting T
J
=25°C, I
D
=I
AR
, V
DD
=50V
2
700
7.7
22
5.5
20
V
ns
nC
A
A
A
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QW-R502-483.b
5N80
Preliminary
Power MOSFET
SWITCHING TIME TEST CIRCUIT
Fig. 1 Unclamped Inductive Load Test Circuits
Fig. 2 Unclamped Inductive Waveforms
L
V
D
2200µF 3.3µF
I
D
V
DD
I
D
V
I
P
W
V
DD
D. U. T.
V
(BR)DSS
V
D
I
DM
V
DD
Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time
D
G
25Ω
S
A
MOS
DIODE
B
A
FAST
DIODE
B
R
G
A
L=100µH
B
D
G
S
85Ω
D. U. T.
3.3µF
1000µF
V
DD
+
-
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4 of 5
QW-R502-483.b
5N80
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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