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5N80G-TF3-T

Description
5 Amps, 800 Volts N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size173KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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5N80G-TF3-T Overview

5 Amps, 800 Volts N-CHANNEL POWER MOSFET

5N80G-TF3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)320 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)5.5 A
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)40 W
Maximum pulsed drain current (IDM)20 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
5N80
Preliminary
Power MOSFET
5 Amps, 800 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
5N80
is a N-channel enhancement mode power
MOSFET. It use UTC advanced technology to provide avalanche
rugged technology and low gate charge.
It can be applied in high current, high speed switching, switch
mode power supplies (SMPS), consumer and industrial lighting,
DC-AC inverters for welding equipment and uninterruptible power
supply(UPS).
1
TO-220
1
TO-220F
FEATURES
* R
DS(on)
:1.8Ω (TYP.)
* Avalanche rugged technology
* Low input capacitance
* Low gate charge
* Application oriented characterization
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
5N80L-TA3-T
5N80G-TA3-T
TO-220
5N80L-TF3-T
5N80G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-483.b

5N80G-TF3-T Related Products

5N80G-TF3-T 5N80G-TA3-T 5N80L-TA3-T 5N80 5N80L-TF3-T
Description 5 Amps, 800 Volts N-CHANNEL POWER MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to conform to conform to - conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-220AB TO-220AB TO-220AB - TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 - 3
Reach Compliance Code compli compli compli - compli
Avalanche Energy Efficiency Rating (Eas) 320 mJ 320 mJ 320 mJ - 320 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 800 V 800 V 800 V - 800 V
Maximum drain current (Abs) (ID) 5.5 A 5.5 A 5.5 A - 5.5 A
Maximum drain current (ID) 5.5 A 5.5 A 5.5 A - 5.5 A
Maximum drain-source on-resistance 2.5 Ω 2.5 Ω 2.5 Ω - 2.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB TO-220AB - TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3
Number of components 1 1 1 - 1
Number of terminals 3 3 3 - 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 40 W 125 W 125 W - 40 W
Maximum pulsed drain current (IDM) 20 A 20 A 20 A - 20 A
surface mount NO NO NO - NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON SILICON - SILICON
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