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6N50G-TA3-T

Description
6 Amps, 500 Volts N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size174KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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6N50G-TA3-T Overview

6 Amps, 500 Volts N-CHANNEL POWER MOSFET

6N50G-TA3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)270 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)6 A
Maximum drain-source on-resistance1.15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)89 W
Maximum pulsed drain current (IDM)24 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
6N50
Preliminary
Power MOSFET
6 Amps, 500 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
6N50
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
6N50
is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
1
TO-220
1
TO-220F
FEATURES
* 6A, 500V, R
DS(ON)
=1.15Ω @ V
GS
=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N50L-TA3-T
6N50G-TA3-T
6N50L-TF3-T
6N50G-TF3-T
Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
Note:
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-526.a

6N50G-TA3-T Related Products

6N50G-TA3-T 6N50L-TA3-T 6N50 6N50G-TF3-T 6N50L-TF3-T
Description 6 Amps, 500 Volts N-CHANNEL POWER MOSFET 6 Amps, 500 Volts N-CHANNEL POWER MOSFET 6 Amps, 500 Volts N-CHANNEL POWER MOSFET 6 Amps, 500 Volts N-CHANNEL POWER MOSFET 6 Amps, 500 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to conform to - conform to conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-220AB TO-220AB - TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 - 3 3
Reach Compliance Code compli compli - compli compli
Avalanche Energy Efficiency Rating (Eas) 270 mJ 270 mJ - 270 mJ 270 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V - 500 V 500 V
Maximum drain current (Abs) (ID) 6 A 6 A - 6 A 6 A
Maximum drain current (ID) 6 A 6 A - 6 A 6 A
Maximum drain-source on-resistance 1.15 Ω 1.15 Ω - 1.15 Ω 1.15 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB - TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
Number of components 1 1 - 1 1
Number of terminals 3 3 - 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 89 W 89 W - 31 W 31 W
Maximum pulsed drain current (IDM) 24 A 24 A - 24 A 24 A
surface mount NO NO - NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE SINGLE
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON
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