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IRF7381PBF

Description
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.02916ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size126KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF7381PBF Overview

Power Field-Effect Transistor, 4.9A I(D), 30V, 0.02916ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

IRF7381PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)4.9 A
Maximum drain-source on-resistance0.02916 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level2
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)17 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON

IRF7381PBF Preview

PD - 95940
IRF7381PbF
HEXFET
®
Power MOSFET
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Lead-Freel
Description
l
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
Die 1
Die 2
6
5
V
DS
-30V
-12V
These P-Channel
HEXFET
®
power MOSFET
s from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
This Dual SO-8 has been modified through a
customized leadframe for enhanced thermal
characteristics and multiple-die capability making it
ideal in a variety of power applications. With these
improvements, multiple devices can be used in an
application with dramatically reduced board space.
The package is designed for vapor phase, infrared, or
wave soldering techniques.
Top View
R
DS(on)
29.1 mΩ
25 mΩ
SO-8
Absolute Maximum Ratings
Parameter
Die 1
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
-30
±20
Max.
Die 2
-12
±12
Units
V
A
-4.9
-3.4
-17
2.0
1.3
16
-55 to + 150
-7.3
-5.8
TBD
e
Power Dissipation
e
Power Dissipation
c
W
mW/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
e
www.irf.com
Notes

through
ƒ
are on page 4
1
11/9/04
IRF7381PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
V
GS(th)
I
DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
Die 1
Die 2
Die 1
Die 2
I
GSS
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Min.
-30
-12
–––
–––
–––
–––
–––
–––
–––
-1.0
-0.45
–––
–––
–––
–––
–––
–––
13
TBD
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
-0.01
TBD
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
29.1
TBD
5.5
TBD
5.0
TBD
13
TBD
16
TBD
155
TBD
80
TBD
1464
TBD
146
TBD
227
TBD
Typ.
–––
–––
–––
–––
–––
–––
23
TBD
19
TBD
Max.
–––
–––
–––
–––
29.16
49.31
25
34
49
-2.5
-0.9
-15
-25
-1.0
-100
±100
±100
–––
–––
44
TBD
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
Conditions
V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1mA
mΩ V
GS
= -10V, I
D
= -5.0A
V
GS
= -4.5V, I
D
= -4.0A
V
GS
= -4.5V, I
D
= -7.3A
V
GS
= -2.5V, I
D
= -5.8A
V
GS
= -1.8V, I
D
= -3.7A
V V
DS
= V
GS
, I
D
= -250µA
d
d
d
d
d
µA V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
V
DS
= -9.6V, V
GS
= 0V
V
DS
= -12V, V
GS
= 0V, T
J
= 70°C
V
GS
= ±20V
nA
V
GS
= ±20V
S V
DS
= -10V, I
D
= -5.0A
V
DS
= -10V, I
D
= -7.3A
Die 1
V
DS
= -15V, I
D
= -4.9A, V
GS
= -10V
d
d
Die 2
V
DS
= -10V, I
D
= -7.3A, V
GS
=- 4.5V
Die 1
V
DS
= -15V, I
D
= -1.0A, R
G
= 6.0Ω
V
GS
= -10V
ns
Die 2
V
DS
= -10V, I
D
= -TBDA, R
G
= TBDΩ
V
GS
= -4.5V
Die 1
V
GS
= 0V, V
DS
= -25V, f= 1.0MHz
pF
Die 2
V
GS
= 0V, V
DS
= -10V, f= 1.0MHz
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Ù
Reverse Recovery Time
Reverse Recovery Charge
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Die 1
Die 2
Max.
Units
Conditions
-2.0
A MOSFET symbol
showing the
-2.0
-17
A integral reverse
p-n junction diode.
TBD
-1.2
V T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
-1.2
––– ns Die 1
T
J
= 25°C, I
F
= -2.0A, di/dt = 100A/µs
–––
––– nC Die 2
T
J
= 25°C, I
F
= -2.0A, di/dt = 100A/µs
–––
d
d
d
2
www.irf.com
IRF7381PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
A
5
B
DIM
A
b
INCHES
MIN
.0532
.013
.0075
.189
.1497
MAX
.0688
.0098
.020
.0098
.1968
.1574
MILLIMET ERS
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
A1 .0040
6
E
8
7
6
5
H
0.25 [.010]
A
c
D
E
e
e1
H
1
2
3
4
.050 BASIC
.025 BASIC
.2284
.0099
.016
.2440
.0196
.050
1.27 BASIC
0.635 BAS IC
5.80
0.25
0.40
6.20
0.50
1.27
6X
e
K
L
y
e1
A
C
0.10 [.004]
y
K x 45°
8X b
0.25 [.010]
A1
C A B
8X L
7
8X c
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
6.46 [.255]
FOOT PRINT
8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
www.irf.com
3
IRF7381PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:

Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 16)
‚
Pulse width
400µs; duty cycle
2%.
ƒ
Surface mounted on 1 in square Cu board
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
4
www.irf.com
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