TC74HC4066AP/AF/AFT
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HC4066AP,TC74HC4066AF,TC74HC4066AFT
Quad Bilateral Switch
The TC74HC4066A is a high speed CMOS QUAD BILATERAL
SWITCH fabricated with silicon gate C
2
MOS technology.
It consists of four independent high speed switches capable of
controlling either digital or analog signals while maintaining the
CMOS low power dissipation.
Control input (C) is provided to control the switch. The switch
turns ON while the C input is high, and the switch turns OFF
while low.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HC4066AP
Features
High speed: t
pd
= 7 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 1
μA
(max) at Ta = 25°C
High noise immunity: V
NIH
= V
NIL
= 28% V
CC
(min)
Low ON resistance: R
ON
= 50
Ω
(typ.) at V
CC
= 9 V
High degree of linearity: THD = 0.05% (typ.) at V
CC
= 5 V
Pin and function compatible with 4066B
TC74HC4066AF
TC74HC4066AFT
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
TSSOP14-P-0044-0.65A
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.06 g (typ.)
1
2012-02-29
TC74HC4066AP/AF/AFT
Pin Assignment
IEC Logic Symbol
(13)
(1)
(5)
(4)
(6)
(8)
(12)
(11)
(10)
4O/I
(9)
3O/I
(3)
2O/I
1I/O
1O/I
2O/I
2I/O
2C
3C
GND
(V
SS
)
1
2
3
4
5
6
7
(top view)
14
13
12
11
10
9
8
V
CC
1C
4C
4I/O
1C
1I/O
2C
2I/O
3C
×1
1
1
(2)
1O/I
4O/I
3O/I
3I/O
3I/O
4C
4I/O
Truth Table
Control
H
L
Switch Function
On
Off
2
2012-02-29
TC74HC4066AP/AF/AFT
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
Control input voltage
Switch I/O voltage
Control input diode current
I/O diode current
Switch through Current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
I/O
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 13
−0.5
to V
CC
+ 0.5
−0.5
to V
CC
+ 0.5
±20
±20
±25
±50
500 (DIP) (Note 2)/180 (SOP/TSSOP)
−65
to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta =
−40
to 65°C. From Ta = 65 to 85°C a derating factor of
−10
mW/°C should be
applied up to 300 mW.
Operating Ranges (Note)
Characteristics
Supply voltage
Control input voltage
Switch I/O voltage
Operating temperature
Symbol
V
CC
V
IN
V
I/O
T
opr
Rating
2 to 12
0 to V
CC
0 to V
CC
−40
to 85
0 to 1000 (V
CC
= 2.0 V)
Input rise and fall time
t
r,
t
f
0 to 500 (V
CC
= 4.5 V)
0 to 400 (V
CC
= 6.0 V)
0 to 250 (V
CC
= 10.0 V)
ns
Unit
V
V
V
°C
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
3
2012-02-29
TC74HC4066AP/AF/AFT
Electrical Characteristics
DC Characteristics
Ta = 25°C
Characteristics
Symbol
Test Condition
V
CC
(V)
2.0
High-level control
input voltage
V
IHC
―
4.5
9.0
12.0
2.0
Low-level control
input voltage
V
ILC
―
4.5
9.0
12.0
V
IN
= V
IHC
V
I/O
= V
CC
to GND
I
I/O
≤
1 mA
ON resistance
R
ON
V
IN
= V
IHC
V
I/O
= V
CC
or GND
I
I/O
≤
1 mA
Difference of ON
resistance between
switches
Input/output leakage
current
(switch off)
Switch input leakage
current
(switch on, output
open)
Control input current
Quiescent supply
current
V
IN
= V
IHC
ΔR
ON
V
I/O
= V
CC
to GND
I
I/O
≤
1 mA
V
OS
= V
CC
or GND
I
OFF
V
IS
= GND or V
CC
V
IN
= V
ILC
V
OS
=V
CC
or GND
V
IN
= V
IHC
V
IN
= V
CC
or GND
12.0
―
―
±100
―
±1000
nA
4.5
9.0
12.0
2.0
4.5
9.0
12.0
4.5
9.0
12.0
Min
1.50
3.15
6.30
8.40
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
―
―
―
―
―
―
―
―
96
55
45
160
70
50
45
10
5
5
Max
―
―
―
―
0.50
1.35
2.70
3.60
170
85
80
―
100
75
70
―
―
―
Ta =
−40
to 85°C
Min
1.50
3.15
6.30
8.40
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Max
―
―
―
―
0.50
1.35
2.70
3.60
200
100
90
―
130
95
90
―
―
―
Ω
Ω
V
V
Unit
I
IZ
12.0
―
―
±100
―
±1000
nA
I
IN
12.0
6.0
―
―
―
―
―
―
―
―
±100
1.0
4.0
8.0
―
―
―
―
±1000
10.0
40.0
80.0
nA
I
CC
V
IN
= V
CC
or GND
9.0
12.0
μA
4
2012-02-29
TC74HC4066AP/AF/AFT
AC Characteristics
(C
L
= 50 pF, input: t
r
= t
f
= 6 ns)
Characteristics
Symbol
Test Condition
VCC (V)
2.0
Phase difference
between input and
output
φ
I-O
―
4.5
9.0
12.0
2.0
Output enable time
t
pZL
t
pZH
R
L
= 1 kΩ
4.5
9.0
12.0
2.0
Output disable time
t
pLZ
t
pHZ
R
L
= 1 kΩ
4.5
9.0
12.0
R
L
= 1 kΩ
Maximum control
input frequency
C
L
= 15 pF
V
OUT
= 1/2 V
CC
Control input
capacitance
Switch terminal
capacitance
Feed through
capacitance
Power dissipation
capacitance
C
IN
C
I/O
C
IOS
C
PD
―
―
―
(Note)
2.0
4.5
9.0
12.0
Min
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Ta = 25°C
Typ.
10
4
3
3
18
8
6
6
20
10
8
8
30
30
30
30
5
6
0.5
15
Max
50
10
8
7
100
20
12
12
115
23
20
18
―
―
―
―
10
―
―
―
Ta =
−40
to 85°C
Min
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Max
65
13
10
9
125
25
22
18
145
29
25
22
―
―
―
―
10
―
―
―
pF
pF
pF
pF
MHz
ns
ns
ns
Unit
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
= C
PD
·V
CC
·f
IN
+ I
CC
/ 4 (per channel)
5
2012-02-29
51mcu
京公网安备 11010802033920号
EEWORLD
