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11N90G-TA3-T

Description
11 Amps, 900 Volts N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size201KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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11N90G-TA3-T Overview

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

11N90G-TA3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)1000 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (Abs) (ID)11 A
Maximum drain current (ID)11 A
Maximum drain-source on-resistance1.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)25 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)160 W
Maximum pulsed drain current (IDM)44 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)650 ns
Maximum opening time (tons)460 ns
UNISONIC TECHNOLOGIES CO., LTD
11N90
Preliminary
Power MOSFET
11 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
11N90
is an N-channel enhancement mode Power
FET using UTC’s advanced technology to provide costomers with
planar stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC
11N90
is universally applied in high efficiency switch
mode power supply,
1
TO-220
1
TO-220F1
FEATURES
* 11A, 900V, R
DS(on)
= 1.1Ω @V
GS
= 10 V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N90L-TA3-T
11N90G-TA3-T
11N90L-TF1-T
11N90G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F1
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-497.a

11N90G-TA3-T Related Products

11N90G-TA3-T 11N90L-TA3-T 11N90 11N90G-TF1-T 11N90L-TF1-T
Description 11 Amps, 900 Volts N-CHANNEL POWER MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-220AB TO-220AB - TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 - 3 3
Reach Compliance Code compli compli - compliant compliant
Avalanche Energy Efficiency Rating (Eas) 1000 mJ 1000 mJ - 1000 mJ 1000 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 900 V 900 V - 900 V 900 V
Maximum drain current (Abs) (ID) 11 A 11 A - 11 A 11 A
Maximum drain current (ID) 11 A 11 A - 11 A 11 A
Maximum drain-source on-resistance 1.1 Ω 1.1 Ω - 1.1 Ω 1.1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 25 pF 25 pF - 25 pF 25 pF
JEDEC-95 code TO-220AB TO-220AB - TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
Number of components 1 1 - 1 1
Number of terminals 3 3 - 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 160 W 160 W - 50 W 50 W
Maximum pulsed drain current (IDM) 44 A 44 A - 44 A 44 A
surface mount NO NO - NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE SINGLE
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON
Maximum off time (toff) 650 ns 650 ns - 650 ns 650 ns
Maximum opening time (tons) 460 ns 460 ns - 460 ns 460 ns
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