UNISONIC TECHNOLOGIES CO., LTD
11N90
Preliminary
Power MOSFET
11 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
11N90
is an N-channel enhancement mode Power
FET using UTC’s advanced technology to provide costomers with
planar stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC
11N90
is universally applied in high efficiency switch
mode power supply,
1
TO-220
1
TO-220F1
FEATURES
* 11A, 900V, R
DS(on)
= 1.1Ω @V
GS
= 10 V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N90L-TA3-T
11N90G-TA3-T
11N90L-TF1-T
11N90G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F1
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-497.a
11N90
PARAMETER
Preliminary
SYMBOL
V
DSS
V
GSS
I
D
I
DM
E
AS
E
AR
dv/dt
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
RATINGS
UNIT
Drain-Source Voltage
900
V
Gate-Source Voltage
±30
V
Continuous
11
A
Drain Current
Pulsed (Note 1)
28.0
A
Single Pulsed (Note 2)
960
mJ
Avalanche Energy
Repetitive (Note 1)
12
mJ
Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
TO-220
160
W
Power Dissipation
P
D
TO-220F1
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
TO-220
TO-220F1
TO-220
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
0.78
2.48
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
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QW-R502-497.a
11N90
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
MIN
900
1.0
10
100
100
-100
5.0
1.1
TYP MAX UNIT
V
V/°C
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
△
BV
DSS
/
△
T
J
I
D
=250µA, Referenced to 25°C
I
DSS
I
GSS
V
DS
=900V, V
GS
=0V
V
DS
=720V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
3.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.5A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=5.5A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=720V, I
D
=11.0A
Gate to Source Charge
Q
GS
(Note 4, 5)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=450V, I
D
=11.0A, R
G
=25Ω
Rise Time
t
R
(Note 4, 5)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
(Note1)
Drain-Source Diode Forward Voltage
V
SD
I
S
=11A, V
GS
=0V
(Note 4)
V
GS
=0V, I
S
=11.0A, dI
F
/dt=100A/µs
Body Diode Reverse Recovery Time
t
RR
(Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 37mH, I
AS
= 7.0A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
11.0A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
0.91
2530 3290
215
280
23
30
60
13
25
60
130
130
85
80
130
270
270
180
11
28.0
1.4
1000
17.0
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3 of 6
QW-R502-497.a
11N90
Gate Charge Test Circuit
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Waveforms
V
GS
Q
G
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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4 of 6
QW-R502-497.a
11N90
Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-497.a
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