500V N-CHANNEL MOSFET
| 13N50 | 13N50G-TF1-T | 13N50L-TA3-T | 13N50L-TF3-T | 13N50G-TA3-T | BUK7606-75B_15 | 13N50L-TF1-T | 13N50_10 | |
|---|---|---|---|---|---|---|---|---|
| Description | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET | N-channel TrenchMOS standard level FET | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET |
| Is it Rohs certified? | - | conform to | conform to | conform to | conform to | - | conform to | - |
| Parts packaging code | - | TO-220AB | TO-220AB | TO-220AB | TO-220AB | - | TO-220AB | - |
| package instruction | - | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN | - | FLANGE MOUNT, R-PSFM-T3 | - |
| Contacts | - | 3 | 3 | 3 | 3 | - | 3 | - |
| Reach Compliance Code | - | compli | compli | compli | compli | - | compli | - |
| Is Samacsys | - | N | N | N | N | - | N | - |
| Avalanche Energy Efficiency Rating (Eas) | - | 860 mJ | 860 mJ | 860 mJ | 972 mJ | - | 860 mJ | - |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | - |
| Minimum drain-source breakdown voltage | - | 500 V | 500 V | 500 V | 500 V | - | 500 V | - |
| Maximum drain current (Abs) (ID) | - | 13 A | 13 A | 13 A | 13 A | - | 13 A | - |
| Maximum drain current (ID) | - | 13 A | 13 A | 13 A | 13 A | - | 13 A | - |
| Maximum drain-source on-resistance | - | 0.48 Ω | 0.48 Ω | 0.48 Ω | 0.48 Ω | - | 0.48 Ω | - |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | - |
| JEDEC-95 code | - | TO-220AB | TO-220AB | TO-220AB | TO-220AB | - | TO-220AB | - |
| JESD-30 code | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - | R-PSFM-T3 | - |
| Number of components | - | 1 | 1 | 1 | 1 | - | 1 | - |
| Number of terminals | - | 3 | 3 | 3 | 3 | - | 3 | - |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | - |
| Maximum operating temperature | - | 150 °C | 150 °C | 150 °C | 150 °C | - | 150 °C | - |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | - |
| Package form | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | - |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | - |
| Maximum power dissipation(Abs) | - | 48 W | 168 W | 48 W | 168 W | - | 48 W | - |
| Maximum pulsed drain current (IDM) | - | 52 A | 52 A | 52 A | 52 A | - | 52 A | - |
| Certification status | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | - |
| surface mount | - | NO | NO | NO | NO | - | NO | - |
| Terminal form | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | - |
| Terminal location | - | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | - |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - |
| transistor applications | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | - |
| Transistor component materials | - | SILICON | SILICON | SILICON | SILICON | - | SILICON | - |
| Base Number Matches | - | 1 | 1 | 1 | 1 | - | 1 | - |
Power technology
FPGA/CPLD
Microcontroller MCU
Integrated technical exchanges
FPGA/CPLD
Energy Infrastructure?
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