13N50L-TF1-T datasheet, PDF - EEWORLD Datasheet

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13N50L-TF1-T: Description500V N-CHANNEL MOSFET; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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13N50L-TF1-T Overview

500V N-CHANNEL MOSFET

13N50L-TF1-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compli
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	860 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	13 A
Maximum drain current (ID)	13 A
Maximum drain-source on-resistance	0.48 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	48 W
Maximum pulsed drain current (IDM)	52 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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13N50L-TF1-T Related Products

	13N50L-TF1-T	13N50	13N50G-TF1-T	13N50L-TA3-T	13N50L-TF3-T	13N50G-TA3-T	BUK7606-75B_15	13N50_10
Description	500V N-CHANNEL MOSFET	500V N-CHANNEL MOSFET	500V N-CHANNEL MOSFET	500V N-CHANNEL MOSFET	500V N-CHANNEL MOSFET	500V N-CHANNEL MOSFET	N-channel TrenchMOS standard level FET	500V N-CHANNEL MOSFET
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	-	-
Parts packaging code	TO-220AB	-	TO-220AB	TO-220AB	TO-220AB	TO-220AB	-	-
package instruction	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3	TO-220, 3 PIN	FLANGE MOUNT, R-PSFM-T3	TO-220, 3 PIN	-	-
Contacts	3	-	3	3	3	3	-	-
Reach Compliance Code	compli	-	compli	compli	compli	compli	-	-
Is Samacsys	N	-	N	N	N	N	-	-
Avalanche Energy Efficiency Rating (Eas)	860 mJ	-	860 mJ	860 mJ	860 mJ	972 mJ	-	-
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	-
Minimum drain-source breakdown voltage	500 V	-	500 V	500 V	500 V	500 V	-	-
Maximum drain current (Abs) (ID)	13 A	-	13 A	13 A	13 A	13 A	-	-
Maximum drain current (ID)	13 A	-	13 A	13 A	13 A	13 A	-	-
Maximum drain-source on-resistance	0.48 Ω	-	0.48 Ω	0.48 Ω	0.48 Ω	0.48 Ω	-	-
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	-
JEDEC-95 code	TO-220AB	-	TO-220AB	TO-220AB	TO-220AB	TO-220AB	-	-
JESD-30 code	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-	-
Number of components	1	-	1	1	1	1	-	-
Number of terminals	3	-	3	3	3	3	-	-
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C	-	-
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	-
Maximum power dissipation(Abs)	48 W	-	48 W	168 W	48 W	168 W	-	-
Maximum pulsed drain current (IDM)	52 A	-	52 A	52 A	52 A	52 A	-	-
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
surface mount	NO	-	NO	NO	NO	NO	-	-
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	-
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	-	-
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	-
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	-	-
Base Number Matches	1	-	1	1	1	1	-	-

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