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30N06L-TF3-T

Description
30 Amps, 60 Volts N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size230KB,9 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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30N06L-TF3-T Overview

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

30N06L-TF3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)300 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
30N06
30 Amps, 60 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 30N06 is a low voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
Power MOSFET
FEATURES
* R
DS(ON)
= 40mΩ@V
GS
= 10 V
* Ultra low gate charge ( typical 20 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
*Pb-free plating product number: 30N06L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Normal
Lead Free Plating
30N06-TA3-T
30N06L-TA3-T
TO-220
30N06-TF3-T
30N06L-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-087.B

30N06L-TF3-T Related Products

30N06L-TF3-T 30N06-TA3-T 30N06L-TA3-T 30N06_07 30N06 30N06-TF3-T
Description 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET
Parts packaging code TO-220AB TO-220AB TO-220AB - - TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - - FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 - - 3
Reach Compliance Code compli compli compli - - compli
ECCN code EAR99 EAR99 EAR99 - - EAR99
Avalanche Energy Efficiency Rating (Eas) 300 mJ 300 mJ 300 mJ - - 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V - - 60 V
Maximum drain current (ID) 30 A 30 A 30 A - - 30 A
Maximum drain-source on-resistance 0.04 Ω 0.04 Ω 0.04 Ω - - 0.04 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB TO-220AB - - TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - - R-PSFM-T3
Number of components 1 1 1 - - 1
Number of terminals 3 3 3 - - 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - - FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL - - N-CHANNEL
Maximum pulsed drain current (IDM) 120 A 120 A 120 A - - 120 A
surface mount NO NO NO - - NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - - THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE - - SINGLE
transistor applications SWITCHING SWITCHING SWITCHING - - SWITCHING
Transistor component materials SILICON SILICON SILICON - - SILICON
Base Number Matches 1 1 1 - - 1
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