UNISONIC TECHNOLOGIES CO., LTD
30N06
30 Amps, 60 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 30N06 is a low voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
Power MOSFET
FEATURES
* R
DS(ON)
= 40mΩ@V
GS
= 10 V
* Ultra low gate charge ( typical 20 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
*Pb-free plating product number: 30N06L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Normal
Lead Free Plating
30N06-TA3-T
30N06L-TA3-T
TO-220
30N06-TF3-T
30N06L-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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1 of 8
QW-R502-087.B
30N06
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
60
V
Gate to Source Voltage
±20
V
T
C
= 25℃
30
A
Continuous Drain Current
I
D
T
C
= 100℃
21.3
A
Pulsed Drain Current (Note 1)
I
DM
120
A
Single Pulsed (Note 2)
E
AS
300
mJ
Avalanche Energy
8
mJ
Repetitive (Note 1)
E
AR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
7.5
V/ns
TO-220
79
W
Power Dissipation
P
D
TO-220F
45
W/℃
Junction Temperature
T
J
+150
℃
Operation Temperature
T
OPR
-55 ~ +150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
TO-220
TO-220F
TO-220
TO-220F
SYMBOL
θ
JA
θ
JC
RATING
62
62
1.9
2.7
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
MIN TYP MAX UNIT
60
10
100
-100
0.06
2.0
32
800
300
80
12
79
50
52
20
6
9
4.0
40
V
µA
nA
nA
V/℃
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
△
BV
DSS
/△T
J
I
D
=250 µA, Referenced to 25℃
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 15 A
V
GS
= 0 V, V
DS
= 25 V, f =
1MHz
V
DD
= 30V, I
D
=15 A, V
GS
=10V
(Note 4, 5)
V
DS
= 60V, V
GS
= 10 V, I
D
=
24A (Note 4, 5)
30
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QW-R502-087.B
30N06
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 30A
Maximum Continuous
Diode Forward Current
Drain-Source
I
S
Power MOSFET
MIN TYP MAX UNIT
1.4
30
120
40
70
V
A
A
ns
µC
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 30A,
dI
F
/ dt = 100 A/µs (Note4)
Reverse Recovery Charge
Q
RR
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.66mH, I
AS
=30A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25℃
3. I
SD
≤50A,
di/dt≤300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25℃
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
5. Essentially independent of operating temperature.
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QW-R502-087.B
30N06
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-087.B
30N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-087.B
PCB Design
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