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8N80

Description
800V N-CHANNEL MOSFET
File Size187KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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8N80 Overview

800V N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD
8N80
Preliminary
Power MOSFET
800V N-CHANNEL MOSFET
DESCRIPTION
The UTC
8N80
is an N-channel mode Power FET, it uses UTC’s
advanced technology to provide costumers planar stripe and DMOS
technology. This technology allows a minimum on-state resistance,
superior switching performance. It also can withstand high energy
pulse in the avalanche and commutation mode.
The UTC
8N80
is generally applied in high efficiency switch mode
power supplies.
1
TO-220
1
FEATURES
* Typically 35 nC Low Gate Charge
* 8A, 800V, R
DS(on)
= 1.55Ω @V
GS
= 10 V
* Typically 13 pF Low Crss
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product
TO-220F1
SYMBOL
D
G
S
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N80L-TA3-T
8N80G-TA3-T
8N80L-TF1-T
8N80G-TF1-T
Note: G: GND, D: Drain, S: Source
Package
TO-220
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-471.a

8N80 Related Products

8N80 8N80G-TF1-T 8N80L-TF1-T 8N80G-TA3-T 8N80L-TA3-T
Description 800V N-CHANNEL MOSFET 800V N-CHANNEL MOSFET 800V N-CHANNEL MOSFET 800V N-CHANNEL MOSFET 800V N-CHANNEL MOSFET
Is it Rohs certified? - conform to conform to conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code - TO-220AB TO-220AB TO-220AB TO-220AB
package instruction - TO-220F1, 3 PIN TO-220F1, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts - 3 3 3 3
Reach Compliance Code - compliant compliant compli compli
Avalanche Energy Efficiency Rating (Eas) - 850 mJ 850 mJ 850 mJ 850 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 800 V 800 V 800 V 800 V
Maximum drain current (Abs) (ID) - 8 A 8 A 8 A 8 A
Maximum drain current (ID) - 8 A 8 A 8 A 8 A
Maximum drain-source on-resistance - 1.45 Ω 1.45 Ω 1.45 Ω 1.45 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components - 1 1 1 1
Number of terminals - 3 3 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 59 W 59 W 178 W 178 W
Maximum pulsed drain current (IDM) - 32 A 32 A 32 A 32 A
surface mount - NO NO NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON
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