UNISONIC TECHNOLOGIES CO., LTD
8N90
Preliminary
Power MOSFET
8 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
8N90
is an N-channel mode power MOSFET, using
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
8N90
is generally applied in high efficiency switch
mode power supplies.
FEATURES
*
8A,
900V, R
DS(ON)
=1.55Ω @ V
GS
=10V
* Fast Switching Speed
* 100% Avalanche Tested
* Improved dv/dt Capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N90L-TA3-T
8N90G-TA3-T
Note: G: GND, D: Drain, S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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1 of 5
QW-R502-470.b
8N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
900
V
Gate to Source Voltage
V
GSS
±30
V
Continuous Drain Current (T
C
=25°C)
I
D
8
A
Pulsed Drain Current (Note 1)
I
DM
25
A
Avalanche Current (Note 1)
I
AR
6.3
A
Single Pulsed Avalanche Energy (Note 2)
E
AS
850
mJ
Repetitive Avalanche Energy (Note 1)
E
AR
17.1
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
Total Power Dissipation (T
C
=25°C)
147
W
P
D
Linear Derating Factor above T
C
=25°C
1.17
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=40mH, I
AS
=6.3A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤8A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
RATINGS
θ
JA
62.5
θ
JC
0.85
ELECTRICAL CHARACTERISTICS
(T
C
=25°C,
unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
900
Breakdown Voltage Temperature
ΔBV
DSS
/ΔT
J
I
D
=250μA, Referenced to 25°C
Coefficient
V
DS
=900V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=720V, T
C
=125°C
Gate-Source Leakage Current
I
GSS
V
DS
=0V ,V
GS
=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
3.0
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4A
Forward Transconductance (Note 1)
g
FS
V
DS
=50V, I
D
=4A
4
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note 1, Note 2)
Total Gate Charge
Q
G
V
DS
=720V, V
GS
=10V, I
D
=8A
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=450V, I
D
=8A, R
G
=25Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=8A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=8A, dI
F
/dt=100A/μs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNIT
°C/W
°C/W
TYP
MAX UNIT
V
0.95
10
100
±100
5.0
1550
V/°C
µA
µA
nA
V
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
940
5.5
1600 2080
130
170
12
15
35
10
14
40
110
70
70
45
90
230
150
150
8
25
1.4
530
5.8
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QW-R502-470.b
8N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-470.b
8N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
V
GS
Gate Charge Waveforms
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
G
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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QW-R502-470.b
8N90
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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