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8N90G-TA3-T

Description
8 Amps, 900 Volts N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size164KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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8N90G-TA3-T Overview

8 Amps, 900 Volts N-CHANNEL POWER MOSFET

8N90G-TA3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)850 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance1.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)25 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
8N90
Preliminary
Power MOSFET
8 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
8N90
is an N-channel mode power MOSFET, using
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
8N90
is generally applied in high efficiency switch
mode power supplies.
FEATURES
*
8A,
900V, R
DS(ON)
=1.55Ω @ V
GS
=10V
* Fast Switching Speed
* 100% Avalanche Tested
* Improved dv/dt Capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N90L-TA3-T
8N90G-TA3-T
Note: G: GND, D: Drain, S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-470.b

8N90G-TA3-T Related Products

8N90G-TA3-T 8N90L-TA3-T 8N90
Description 8 Amps, 900 Volts N-CHANNEL POWER MOSFET 8 Amps, 900 Volts N-CHANNEL POWER MOSFET 8 Amps, 900 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
Parts packaging code TO-220AB TO-220AB -
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Contacts 3 3 -
Reach Compliance Code compli compli -
Avalanche Energy Efficiency Rating (Eas) 850 mJ 850 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 900 V 900 V -
Maximum drain current (ID) 8 A 8 A -
Maximum drain-source on-resistance 1.55 Ω 1.55 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-220AB TO-220AB -
JESD-30 code R-PSFM-T3 R-PSFM-T3 -
Number of components 1 1 -
Number of terminals 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 25 A 25 A -
surface mount NO NO -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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