BCY79-VIILEADFREE datasheet, PDF

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BCY79-VIILEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,; CategoryDiscrete semiconductor The transistor; File Size540KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BCY79-VIILEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,

BCY79-VIILEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	7 pF
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power consumption environment	0.34 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	400 ns
Maximum opening time (tons)	100 ns
VCEsat-Max	0.8 V

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BCY78, VII, VIII, IX, X

BCY79, VII, VIII, IX, X

SILICON

PNP TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCY78 and BCY79

series types are silicon PNP epitaxial planar transistors,

mounted in a hermetically sealed metal case, designed

for low noise amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg



BCY78

BCY79

UNITS

°C

°C/W

5.0

100

200

340

1.0

-65 to +200

450

150

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=Rated VCBO

VCB=Rated VCBO, TA=150°C

VEB=5.0V

IC=10μA (BCY78)

IC=10μA (BCY79)

IC=2.0mA (BCY78)

IC=2.0mA (BCY79)

IE=1.0μA

5.0

IC=10mA, IB=250μA

IC=100mA, IB=2.5mA

IC=10mA, IB=250μA

0.60

IC=100mA, IB=2.5mA

0.70

VCE=5.0V, IC=2.0mA

0.60

BCY78-VII

BCY79-VII

MIN TYP MAX

- 140

120 -

220

MAX

0.25

0.80

0.85

1.20

0.75

BCY78-IX

BCY79-IX

MIN MAX

250 460

160 630

UNITS

μA

BCY78-X

BCY79-X

MIN MAX

100

380 630

240 1000

hFE

VCE=5.0V,

VCE=1.0V,

IC=10μA

IC=2.0mA

IC=10mA

IC=100mA

BCY78-VIII

BCY79-VIII

MIN MAX

180 310

120 400

R4 (4-June 2013)

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Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	32 V	32 V	32 V	45 V	32 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	45	60	60	60	40	45	60
JEDEC-95 code	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Maximum off time (toff)	400 ns	400 ns	400 ns	400 ns	400 ns	400 ns	400 ns	400 ns
Maximum opening time (tons)	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns

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