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Datasheet> All Categories > Wireless rf/communication> Radio frequency and microwave> BGY212A
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BGY212A

Description
RF/Microwave Amplifier, 1710 MHz - 1785 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, PLASTIC CAP, LEADLESS SURFACE MOUNT, SOT482C, 4
CategoryWireless rf/communication    Radio frequency and microwave   
File Size133KB，11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BGY212A Overview

RF/Microwave Amplifier, 1710 MHz - 1785 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, PLASTIC CAP, LEADLESS SURFACE MOUNT, SOT482C, 4

BGY212A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionSOT-482C
Reach Compliance Codeunknown
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)10 dBm
Number of functions1
Maximum operating frequency1785 MHz
Minimum operating frequency1710 MHz
Maximum operating temperature100 °C
Minimum operating temperature-30 °C
Package body materialCERAMIC
Encapsulate equivalent codeSOT-482C
power supply3.5 V
RF/Microwave Device TypesNARROW BAND HIGH POWER
technologyHYBRID
Maximum voltage standing wave ratio8

BGY212A Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D373
BGY212A
UHF amplifier module
Preliminary specification
1999 Aug 23
Philips Semiconductors
Preliminary specification
UHF amplifier module
FEATURES
•
3.5 V nominal supply voltage
•
2 W output power
•
Easy output power control by DC voltage.
APPLICATIONS
•
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
1710 to 1785 MHz frequency range.
DESCRIPTION
book, halfpage
BGY212A
PINNING - SOT482C
PIN
1
2
3
4
5
V
C
V
S
RF output
ground
DESCRIPTION
RF input
The BGY212A is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover. The
module consists of one NPN silicon planar transistor die
and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
5
4
3
2
1
MBK201
Bottom view
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°C.
MODE OF
OPERATION
Pulsed;
δ
= 1 : 8
f
(MHz)
1710 to 1785
V
S
(V)
3.5
V
C
(V)
≤2.2
P
L
(dBm)
typ. 33
G
p
(dB)
typ. 33
η
(%)
typ. 40
Z
S
, Z
L
(Ω)
50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
S
V
C
P
D
P
L
T
stg
T
mb
PARAMETER
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting base temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
CONDITIONS
V
C
< 0.2 V; P
D
= 0 mW
V
C
≥
0.2 V
−
−
−
−
−
−40
−30
MIN.
7
4.1
2.7
10
34.1
+100
+100
MAX.
V
V
V
dBm
dBm
°C
°C
UNIT
1999 Aug 23
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
CHARACTERISTICS
Z
S
= Z
L
= 50
Ω;
P
D
= 0 dBm; V
S
= 3.5 V; V
C
≤
2.2 V; f = 1710 to 1785 MHz; T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs
unles
otherwise specified.
SYMBOL
I
Q
I
CM
P
L
PARAMETER
leakage current
peak control current
load power
V
C
= 0.2 V
V
C
= 0.2 V; V
S
= 7 V
adjust V
C
for P
L
= 32 dBm
V
C
= 2.2 V; V
S
= 3.5 V
V
C
= 2.2 V; V
S
= 3.2 V
V
C
= 2.2 V; V
S
= 3.2 V; T
mb
= 85
°C
G
p
η
H
2
H
3
VSWR
in
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
P
L
= 32 dBm
P
L
= 32 dBm
P
L
= 32 dBm
P
L
= 32 dBm
P
L
= 2 to 32 dBm
V
S
= 3.2 to 4.1 V; P
D
=
−3
to 3 dBm;
V
C
= 0 to 2.2 V; P
L
≤
33 dBm;
VSWR
≤
8 : 1 through all phases
V
C
= 0.2 V; P
D
= 3 dBm
P
L
= 2 to 32 dBm;
bandwidth = 100 kHz; 20 MHz above
transmission band
P
D
with 3% AM; f = 100 kHz;
P
L
= 2 to 32 dBm
P
D
=
−0.5
to 0.5 dBm;
P
L
= 2 to 32 dBm
P
L
=
−8
to +2 dBm
P
L
= 2 to 32 dBm
T
X
/ R
X
conversion
t
r
t
f
carrier rise time
carrier fall time
ruggedness
P
L
= 32 dBm; f = 1785 MHz
P
L
(1805 MHz) / P
D
(1765 MHz)
P
L
= 2 to 32 dBm; time to settle
within
−0.5
dB of final P
L
P
L
= 2 to 32 dBm; time to fall below
−
33 dBm
V
S
= 4.1 V; adjust V
C
for
P
L
= 33 dBm; VSWR
≤
8 : 1 through
all phases
CONDITIONS
−
−
−
−
32
31
−
−
−
−
−
−
−
MIN.
−
5
−
33.2
32.3
31.8
32
40
−
−
TYP.
MAX.
10
20
3
−
−
−
−
−
−35
−40
3:1
−60
dBc
UNIT
µA
mA
mA
dBm
dBm
dBm
dB
%
dBc
dBc
isolation
control bandwidth
P
n
noise power
−
tbd
−
−36
−
−73
−33
−
−71
dBm
MHz
dBm
AM/AM conversion
AM/PM conversion
control slope
−
−
−
−
−
−
−
5
−
tbd
tbd
28
1.5
1.5
8
tbd
−
−
30
2
2
%
deg/dB
dB / V
dB / V
dB
µs
µs
no degradation
1999 Aug 23
3
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
3
P
L
(W)
1710MHz
4
P
L
(W)
1710MHz
1785MHz
3
2
1785MHz
2
1
1
0
1
1.5
2
V
C
(V)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
0
2.5
2
3
4
V
S
(V)
Z
S
= Z
L
= 50
Ω
; V
C
= 2.2 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
5
Fig.2
Load power as a function of control voltage;
typical values.
Fig.3
Load power as a function of supply voltage;
typical values.
50
η
(%)
40
1710MHz
1785MHz
3
P
L
(W)
2
30
20
1
10
0
0
0.5
1
1.5
2
P
L
(W)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
2.5
0
1700
1750
1800
f (MHz)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm; V
C
= 2.2 V;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
Fig.4
Efficiency as a function of load power;
typical values.
Fig.5
Load power as a function of frequency;
typical values.
1999 Aug 23
4
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
4
VSWR
IN
0
H
2
, H
3
(dBc)
-20
3
H
2
-40
1710MHz
H
3
2
1785MHz
-60
1
0
1
2
P
L
(W)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s
3
-80
1700
1750
1800
f (MHz)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm; P
L
= 1.6 W;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
Fig.6
Input VSWR as a function of load power;
typical values.
Fig.7
Harmonics as a function of
frequency; typical values.
3
P
L
(W)
(1)
16
output
AM
(%)
12
1710MHz
2
(2)
(3)
(4)
8
1785MHz
1
4
0
0
20
40
60
80
100
T
mb
(°C)
0
-20
0
20
40
P
L
(dBm)
Z
S
= Z
L
= 50
Ω
; P
D
= 0 dBm; V
C
= 2.2 V;
δ
= 1 : 8; t
p
= 575
µ
s.
(1) V
S
= 3.5 V; f = 1710 MHz.
(2) V
S
= 3.5 V; f = 1785 MHz.
(3) V
S
= 3.2 V; f = 1710 MHz.
(4) V
S
= 3.2 V; f = 1785 MHz.
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm; T
mb
= 25
°
C;
∆
f = 100 kHz; input amplitude modulation = 3%;
δ
= 1 : 8; t
p
= 575
µ
s.
Fig.8
Load power as a function of mounting
base temperature; typical values.
5
Fig.9
Output amplitude modulation as a
function of load power; typical values.
1999 Aug 23
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