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BGY1816

Description
RF/Microwave Amplifier, 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, PLASTIC, SOT365A, 4 PIN
CategoryWireless rf/communication    Radio frequency and microwave   
File Size71KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BGY1816 Overview

RF/Microwave Amplifier, 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, PLASTIC, SOT365A, 4 PIN

BGY1816 Parametric

Parameter NameAttribute value
MakerNXP
package instructionFLNG,1.6\"H.SPACE
Reach Compliance Codeunknown
Characteristic impedance50 Ω
structureMODULE
Gain24 dB
Maximum input power (CW)20.79 dBm
Number of functions1
Maximum operating frequency1880 MHz
Minimum operating frequency1805 MHz
Maximum operating temperature90 °C
Minimum operating temperature-10 °C
Package body materialCERAMIC
Encapsulate equivalent codeFLNG,1.6\"H.SPACE
power supply5,26 V
RF/Microwave Device TypesNARROW BAND HIGH POWER
Maximum voltage standing wave ratio1.6

BGY1816 Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D167
BGY1816
UHF amplifier module
Product specification
Supersedes data of 1998 May 27
2000 Oct 17
Philips Semiconductors
Product specification
UHF amplifier module
FEATURES
26 V nominal supply voltage
16 W output power into a load of 50
with an RF drive
power of
≤63
mW.
APPLICATIONS
Base station transmitting equipment operating in the
1805 to 1880 MHz frequency band.
DESCRIPTION
The BGY1816 is a three-stage UHF amplifier module in a
SOT365A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
handbook, halfpage
BGY1816
PINNING - SOT365A
PIN
1
2
3
4
Flange
RF input
V
S1
V
S2
RF output
ground
DESCRIPTION
1
2
3
4
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°C.
MODE OF OPERATION
CW
f
(MHz)
1805 to 1880
V
S1
(V)
5
V
S2
(V)
26
P
L
(W)
≥16
G
p
(dB)
≥24
η
(%)
≥30
Z
S
; Z
L
(Ω)
50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
S1
V
S2
P
D
P
L
T
stg
T
mb
PARAMETER
DC supply voltage
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
T
mb
= 25
°C
CONDITIONS
−30
−10
MIN.
4.5
MAX.
5.5
28
120
20
+100
+90
V
V
mW
W
°C
°C
UNIT
2000 Oct 17
2
Philips Semiconductors
Product specification
UHF amplifier module
CHARACTERISTICS
T
mb
= 25
°C;
V
S1
= 5 V; V
S2
= 26 V; P
L
= 16 W; Z
S
= Z
L
= 50
unless otherwise specified.
SYMBOL
f
I
S1
I
S2
P
L
G
p
η
H
2
H
3
VSWR
in
PARAMETER
frequency
supply current
supply current
load power
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
reverse intermodulation
B
AM bandwidth
ruggedness
VSWR
2 : 1 through all phases;
P
L
16 W; V
S2
= 25 to 27 V
P
carrier
= 16 W; P
reverse
=
−40
dBc;
f
i
= f
c
±200
kHz
corner frequency = 3 dB;
P
carrier
= 16 W; modulation = 20%
VSWR
5 : 1 through all phases
P
D
<
−60
dBm
P
D
< 63 mW
CONDITIONS
16
24
30
2
MIN.
1805
80
430
TYP.
BGY1816
MAX.
1880
UNIT
MHz
mA
mA
W
dB
%
dBc
dBc
dBc
dBc
MHz
28
−35
−40
1.6 : 1
−60
−53
no degradation
MGD187
MGD186
handbook, halfpage
30
60
Gp
η
(%)
handbook, halfpage
30
Gp
(dB)
PL
(W)
20
η
40
20
10
20
10
0
0
10
20
PL (W)
0
30
0
0
40
80
PIN (mW)
120
f = 1850 MHz; V
S1
= 5 V; V
S2
= 26 V; Z
S
= Z
L
= 50
Ω;
T
mb
= 25
°C.
f = 1850 MHz; V
S1
= 5 V; V
S2
= 26 V; Z
S
= Z
L
= 50
Ω;
T
mb
= 25
°C.
Fig.2
Power gain and efficiency as functions of
load power; typical values.
Fig.3
Load power as a function of input power;
typical values.
2000 Oct 17
3
Philips Semiconductors
Product specification
UHF amplifier module
APPLICATION INFORMATION
BGY1816
handbook, full pagewidth
C7
C5
C8
C6
Z1
R1
L1
R2
L2
Z2
C3
C1
50
input
C4
C2
50
output
MGM861
VS1
VS2
Fig.4 Test circuit.
List of components (see Figs
4
and
5)
COMPONENT
C1, C2
C3, C4
C5, C6
C7, C8
L1, L2
R1, R2
Z
1
, Z
2
Note
1. The striplines are on a double copper-clad printed-circuit board (RO5880) with
ε
r
= 2.2 and thickness = 0.79 mm.
DESCRIPTION
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Grade 4S2 Ferroxcube bead
metal film resistor
stripline: note 1
10
Ω;
0.4 W
50
VALUE
10
µF;
35 V
10 nF; 50 V
100 pF; 50 V
10 pF; 50 V
4330 030 36300
2322 195 13109
CATALOGUE NO.
2000 Oct 17
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY1816
handbook, full pagewidth
90
42
C7
C5
C8
C6
R1
L1
L2
R2
Z2
C3
C4
Z1
C1
C2
output VS1
VS2 input
MGM862
Dimensions in mm.
Fig.5 Printed-circuit board component layout.
2000 Oct 17
5
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