BSX62/16 datasheet, PDF - EEWORLD Datasheet

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BSX62/16: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size73KB，3 Pages; ManufacturerCOMSET; Websitehttp://comset.halfin.com/; Environmental Compliance

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BSX62/16 Overview

Transistor

BSX62/16 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	COMSET
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power consumption environment	5 W
Maximum power dissipation(Abs)	5 W
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz
Maximum off time (toff)	1500 ns
Maximum opening time (tons)	300 ns
VCEsat-Max	0.8 V

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NPN BSX62-BSX63

SWITCHING TRANSISTORS

C

The BSX62 and BSX63 are NPN switching transistors mounted in

TO-39 metal package.

They are intended for use in medium power switching.

High current and low voltage.

Compliance to RoHS.

B

E

ABSOLUTE MAXIMUM RATINGS

Value

BSX62

40

60

5

3

500

5

200

-65 to +150

Symbol

V

CEO

V

CBO

V

EBO

I

C

I

CM

I

BM

P

D

T

J

T

amb

T

Stg

Ratings

Collector-Emitter Voltage I

B

=0

Collector-Base Voltage

I

E

=0

Emitter-Base Voltage

I

C

=0

Collector Current

Collector Peak Current

Base Peak Current

Total Power Dissipation

T

amb

= 25°

Junction Temperature

Operating ambient temperature

Storage Temperature range

BSX63

60

80

Unit

V

A

mA

W

°C

THERMAL CHARACTERISTICS

Symbol

R

thJ-a

R

thJ-c

Ratings

Thermal Resistance, Junction to ambient

Thermal Resistance, Junction to case

Value

200

28

Unit

°C/W

SWITCHING TIMES

Symbol

t

on

t

off

Turn-on time

Turn-off time

Ratings

I

Con

= 1 A; I

Bon

= 50 mA

I

Boff

= -50 mA

Value

300

1.5

Unit

ns

µs

COMSET SEMICONDUCTORS

1/3

BSX62/16 Related Products

	BSX62/16	BSX63/16	BSX62/10
Description	Transistor	Transistor	Transistor
Is it Rohs certified?	conform to	conform to	conform to
Maker	COMSET	COMSET	COMSET
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	3 A	3 A	3 A
Collector-emitter maximum voltage	40 V	60 V	40 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	63
JEDEC-95 code	TO-39	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN
Maximum power consumption environment	5 W	5 W	5 W
Maximum power dissipation(Abs)	5 W	5 W	5 W
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	70 MHz	70 MHz	70 MHz
Maximum off time (toff)	1500 ns	1500 ns	1500 ns
Maximum opening time (tons)	300 ns	300 ns	300 ns
VCEsat-Max	0.8 V	0.8 V	0.8 V

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