Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | ADPOW |
| package instruction | , |
| Reach Compliance Code | unknown |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 9 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Operating mode | ENHANCEMENT MODE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 250 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |

| APT901R3HN | APT1001R1HN | APT1001R3HN | APT901R1HN | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 9.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN | Power Field-Effect Transistor, 9A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | ADPOW | ADPOW | ADPOW | ADPOW |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Configuration | Single | SINGLE | SINGLE | Single |
| Maximum drain current (Abs) (ID) | 9 A | 9.5 A | 9 A | 9.5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 250 W | 250 W | 250 W | 250 W |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |