APT1001R1HN datasheet, PDF - EEWORLD Datasheet

APT1001R1HN: DescriptionPower Field-Effect Transistor, 9.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size222KB，4 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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APT1001R1HN Overview

Power Field-Effect Transistor, 9.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ADPOW
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (Abs) (ID)	9.5 A
Maximum drain current (ID)	9.5 A
Maximum drain-source on-resistance	1.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA
JESD-30 code	R-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	250 W
Maximum power dissipation(Abs)	250 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

	APT1001R1HN	APT1001R3HN	APT901R1HN	APT901R3HN
Description	Power Field-Effect Transistor, 9.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN	Power Field-Effect Transistor, 9A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	ADPOW	ADPOW	ADPOW	ADPOW
Reach Compliance Code	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	Single	Single
Maximum drain current (Abs) (ID)	9.5 A	9 A	9.5 A	9 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	250 W	250 W	250 W	250 W
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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