CZT751TR13LEADFREE datasheet, PDF

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CZT751TR13LEADFREE: DescriptionPower Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size528KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CZT751TR13LEADFREE Overview

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE, PLASTIC PACKAGE-4

CZT751TR13LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	75 MHz

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CZT751

SURFACE MOUNT

HIGH CURRENT

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT751 type is a

PNP Silicon Transistor manufactured by the epitaxial

planar process, epoxy molded in a surface mount

package, designed for high current applications.

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

Θ

JA

80

60

5.0

2.0

-65 to +150

62.5

UNITS

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

fT

VCB=80V

VEB=4.0V

IC=100µA

IC=10mA

IE=10µA

IC=1.0A, IB=100mA

IC=2.0A, IB=200mA

IC=1.0A, IB=100mA

VCE=2.0V, IC=1.0A

VCE=2.0V, IC=50mA

VCE=2.0V, IC=500mA

VCE=2.0V, IC=1.0A

VCE=2.0V, IC=2.0A

VCE=5.0V, IC=50mA, f=100MHz

75

40

75

80

60

5.0

MAX

100

UNITS

nA

V

0.3

0.5

1.2

1.0

V

MHz

R4 (1-March 2010)

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Description	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE, PLASTIC PACKAGE-4	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE, PLASTIC PACKAGE-4	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE, PLASTIC PACKAGE-4	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4
Is it lead-free?	Lead free	Lead free	Lead free	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	conform to	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G4	LEAD FREE, PLASTIC PACKAGE-4	SMALL OUTLINE, R-PDSO-G4	PLASTIC PACKAGE-4	PLASTIC PACKAGE-4	PLASTIC PACKAGE-4
Contacts	4	4	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	unknown	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2 A	2 A	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	40	40	40	40
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3	e3	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	2 W	2 W	2 W	2 W	2 W	2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	75 MHz	75 MHz	75 MHz	75 MHz	75 MHz	75 MHz

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