TLP523,TLP523−2,TLP523−4
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP523, TLP523−2, TLP523−4
Unit in mm
Programmable Controllers
DC−Output Module
Solid State Relay
The TOSHIBA TLP523,
−2
and
−4
consists of a gallium arsenide
infrared emitting diode coupled with a silicon, darlington connected,
phototransistor which has an integral base−emitter resistor to optimize
switching speed and elevated temperature characteristics.
The TLP523−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP523−4 provide four isolated channels per
package.
•
•
•
•
•
Current transfer ratio: 500% (min.) (I
F
= 1 mA)
Isolation voltage: 2500 Vrms (min.)
Collector−emitter voltage: 55 V (min.)
Leakage current: 10μA (max.) (Ta = 85°C)
UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.26 g (typ.)
11
−
5B2
Pin Configurations
(top view)
TLP523
1
2
4
3
1
2
3
4
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
TLP523-2
8
7
6
5
1
2
3
4
5
6
7
8
TLP523-4
16
TOSHIBA
15
14
13
12
11
10
9
11
−
10C4
Weight: 0.54 g (typ.)
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
1, 3, 5, 7
: Anode
2, 4, 6, 8
: Cathode
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector
TOSHIBA
Weight: 1.1 g (typ.)
11
−
20A3
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2007-10-01
TLP523,TLP523−2,TLP523−4
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Characteristic
Forward current
LED
Forward current derating
Pulse forward current
Reverse voltage
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation
derating (1 circuit (Ta
≥
25°C))
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Total power dissipation
Total power dissipation derating
(Ta
≥
25°C)
Isolation voltage
(Note 1)
Symbol
I
F
ΔI
F
/°C
I
FP
V
R
V
CEO
V
ECO
I
C
P
C
ΔP
C
/°C
T
opr
T
stg
T
sol
P
T
ΔP
T
/°C
BV
S
250
−2.5
150
−1.5
−55~100
−55~125
260
150
−1.5
TLP523
60
−0.7
(Ta
≥
39°C)
TLP523−2
TLP523−4
50
−0.5
(Ta
≥
25°C)
Unit
mA
mA /°C
A
V
V
V
mA
100
−1.0
mW
mW /°C
°C
°C
°C
mW
mW /°C
Vrms
1 (100μs pulse, 100pps)
5
55
0.3
150
2500 (AC, 1min., R.H.≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Operating temperature
range
Symbol
V
CC
I
F
T
opr
Min.
―
―
−25
Typ.
5
16
―
Max.
24
20
85
Unit
V
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2007-10-01
TLP523,TLP523−2,TLP523−4
Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Detector
Collector dark current
Capacitance collector
to emitter
Current transfer ratio
Coupled
Collector−emitter
saturation voltage
Capacitance input
to output
Isolation resistance
Symbol
V
F
I
R
C
T
V
(BR) CEO
I
CEO
C
CE
I
C
/ I
F
V
CE(sat)
C
S
R
S
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 1 mA
V
CE
= 24 V
V
CE
= 24 V, Ta = 85°C
V = 0, f = 1 MHz
I
F
= 1 mA, V
CE
= 1 V
I
C
= 50 mA, I
F
= 10 mA
V
S
= 0, f = 1 MHz
V
S
= 500 V, R.H.≤ 60%
Min.
1.0
—
—
55
—
—
—
500
—
—
5×10
10
Typ.
1.15
—
30
—
10
0.5
10
2000
—
0.8
10
14
Max.
1.3
10
—
—
200
10
—
—
1
—
—
Unit
V
μA
pF
V
nA
μA
pF
%
V
pF
Ω
Switching Characteristics
(Ta = 25°C)
Characteristic
Turn−on time
Turn−off time
Symbol
t
ON
t
OFF
Test Condition
V
CC
= 10 V, R
L
= 180
Ω
I
F
= 16 mA
Min.
—
—
Typ.
3
80
Max.
—
—
Unit
μs
μs
Switching Time Test Circuit
I
F
I
F
R
L
V
CC
V
CE
I
F
t
OFF
9V
1V
V
CE
t
ON
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2007-10-01
TLP523,TLP523−2,TLP523−4
100
I
F
– Ta
200
P
C
– Ta
Allowable forward current
I
F
(mA)
Allowable collector power
dissipation P
C
(mW)
80
TLP523
TLP523 -2, -4
160
TLP523
60
120
TLP523 -2, -4
40
80
20
40
0
-20
0
20
40
60
80
100
120
0
-20
0
20
40
60
80
100
120
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
5000
I
FP
– D
R
Pulse width
≤
100μs
Ta = 25℃
100
Ta = 25℃
50
30
I
F
– V
F
Pulse forward current I
FP
(mA)
3000
1000
500
300
(mA)
Forward current I
F
10
5
3
100
50
30
10
3
10
1
0.5
0.3
-3
3
10
-2
3
10
-1
3
10
0
Duty cycle patio DR
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage VF
(V)
-3.2
Δ
V
F /
Δ
Ta – I
F
1000
500
I
FP
– V
FP
Forward voltage temperature
coefficient
ΔV
F
/
ΔTa
(mV /
℃)
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
Pulse forward current I
FP
(mA)
300
100
50
30
10
5
3
Pulse width
≤
10μs
Repetitive frequency = 100Hz
Ta = 25℃
0.3
1
3
10
30
1
0.6
1.0
1.4
1.8
2.2
2.6
3
Forward current IF
(mA)
Pulse forward voltage
VFP (V)
4
2007-10-01
TLP523,TLP523−2,TLP523−4
I
C
– I
F
300
I
C
– I
F
300
VCE = 1.2V
Ta = 25°C
100
V
CE
= 1V
Ta = 25°C
100
(mA)
50
30
Sample 1
(mA)
50
30
Sample 1
Collector current I
C
Collector current I
C
2
3
10
2
3
10
5
3
5
3
1
0.3
1
3
10
30
1
0.3
1
3
10
30
Forward current IF
(mA)
Forward current IF
(mA)
V
CE(sat)
– Ta
Test condition
A : IC=100mA, IF=10mA
B : IC=50mA, IF=10mA
C : IC=10mA, IF=1mA
D : IC=1mA, IF=0.5mA
Test condition
I
C
– Ta
A : IF =10mA, VCE=1.2V
B : IF =10mA, VCE=1.0V
C : IF =2mA, VCE=1.2V
D : IF =2mA, VCE=1.0V
E : IF =1mA, VCE=1.2V
F : IF =1mA, VCE=1.0V
140
Collector-emitter saturation voltage V
CE
(sat) (V)
1.6
1.4
Test condition
A
Collector current I
C
(mA)
1.2
120
Test condition
A
B
C
1.0
100
B
80
0.8
D
0.6
60
C
D
0.4
40
0.2
20
E
F
0
-40
-20
0
20
40
60
80
100
0
-40
-20
0
20
40
60
80
100
Ambient temperature
Ta (℃)
Ambient temperature
Ta (℃)
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2007-10-01