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FEATURES
44 V Supply Maximum Rating
V
SS
to V
DD
Analog Signal Range
Single/Dual Supply Specifications
Wide Supply Ranges (10.8 V to 16.5 V)
Extended Plastic Temperature Range
(–40 C to +85 C)
Low Power Dissipation (28 mW max)
Low Leakage (20 pA typ)
Available in 28-Lead DIP, SOIC, PLCC, TSSOP and LCCC
Packages
Superior Alternative to:
DG506A, Hl-506
DG507A, Hl-507
CMOS
8-/16-Channel Analog Multiplexers
ADG506A/ADG507A
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
ORDERING GUIDE
The ADG506A and ADG507A are CMOS monolithic analog
multiplexers with 16 channels and dual 8 channels, respectively.
The ADG506A switches one of 16 inputs to a common output,
depending on the state of four binary addresses and an enable
input. The ADG507A switches one of eight differential inputs to
a common differential output, depending on the state of three
binary addresses and an enable input. Both devices have TTL
and 5 V CMOS logic compatible digital inputs.
The ADG506A and ADG507A are designed on an enhanced
LC
2
MOS process, which gives an increased signal capability of
V
SS
to V
DD
and enables operation over a wide range of supply
voltages. The devices can operate comfortably anywhere in the
10.8 V to 16.5 V single or dual supply range. These multiplexers
also feature high switching speeds and low R
ON
.
PRODUCT HIGHLIGHTS
Model
1
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
–55°C to +125°C
Package
Option
2
N-28
R-28
P-28A
Q-28
Q-28
E-28A
N-28
R-28
P-28A
RU-28
Q-28
Q-28
E-28A
ADG506AKN
ADG506AKR
ADG506AKP
ADG506ABQ
ADG506ATQ
ADG506ATE
ADG507AKN
ADG507AKR
ADG507AKP
ADG507AKRU
ADG507ABQ
ADG507ATQ
ADG507ATE
1. Single/Dual Supply Specifications with a Wide Tolerance
The devices are specified in the 10.8 V to 16.5 V range for
both single and dual supplies.
2. Extended Signal Range
The enhanced LC
2
MOS processing results in a high break-
down and an increased analog signal range of V
SS
to V
DD
.
3. Break-Before-Make Switching
Switches are guaranteed break-before-make so input signals
are protected against momentary shorting.
4. Low Leakage
Leakage currents in the range of 20 pA make these multiplexers
suitable for high precision circuits.
NOTES
1
To order MIL-STD-883, Class B processed parts, add /883B to part number.
See Analog Devices’
Military/Aerospace Reference Manual
(1994) for military
data sheet.
2
E = Leadless Ceramic Chip Carrier (LCCC); N = Plastic DIP; P = Plastic
Leaded Chip Carrier (PLCC); Q = Cerdip; R = 0.3" Small Outline IC (SOIC);
RU = Thin Shrink Small Outline Package (TSSOP).
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1998
ADG506A/ADG507A–SPECIFICATIONS
Dual Supply
(V
DD
= +10.8 V to +16.5 V, V
SS
= –10.8 V to –16.5 V unless otherwise noted)
ADG506A
ADG506A
ADG507A
ADG507A
K Version
B Version
–40 C to
–40 C to
+25 C +85 C
+25 C +85 C
V
SS
V
DD
280
450
300
0.6
5
0.02
1
0.04
1
1
0.04
1
1
50
200
100
200
100
25
2.4
0.8
1
8
200
300
50
25
200
300
200
300
68
50
5
44
22
4
0.6
1.5
20
0.2
10
28
8
200
300
50
25
200
300
200
300
68
50
5
44
22
4
0.6
1.5
20
0.2
10
28
10
28
20
0.2
V
SS
V
DD
600
400
V
SS
V
DD
280
450
300
0.6
5
0.02
1
0.04
1
1
0.04
1
1
50
200
100
200
100
25
2.4
0.8
1
8
200
300
50
25
200
300
200
300
68
50
5
44
22
4
0.6
1.5
V
SS
V
DD
600
400
ADG506A
ADG507A
T Version
–55 C to
+25 C +125 C
V
SS
V
DD
280
450
300
0.6
5
0.02
1
0.04
1
1
0.04
1
1
V
SS
V
DD
600
400
Parameter
ANALOG SWITCH
Analog Signal Range
R
ON
Units
V min
V max
Ω
typ
Ω
max
Ω
max
Ω
max
%/°C typ
% typ
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
nA max
V min
V max
µA
max
pF max
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
dB typ
dB min
pF typ
pF typ
pF typ
pC typ
Comments
–10 V
≤
V
S
≤
+10 V, I
DS
= 1 mA; Test Circuit 1
V
DD
= 15 V (± 10%), V
SS
= –15 V (± 10%)
V
DD
= 15 V (± 5%), V
SS
= –15 V (± 5%)
–10 V
≤
V
S
≤
+10 V, I
DS
= 1 mA
–10 V
≤
V
S
≤
+10 V, I
DS
= 1 mA
V1 =
±
10 V, V2 =
V1 =
±
10 V, V2 =
V1 =
±
10 V, V2 =
10 V; Test Circuit 2
10 V; Test Circuit 3
10 V; Test Circuit 4
R
ON
Drift
R
ON
Match
I
S
(OFF), Off Input Leakage
I
D
(OFF), Off Output Leakage
ADG506A
ADG507A
I
D
(ON), On Channel Leakage
ADG506A
ADG507A
I
DIFF
, Differential Off Output
Leakage (ADG507A Only)
DIGITAL CONTROL
V
INH
, Input High Voltage
V
INL
, Input Low Voltage
I
INL
or I
INH
C
IN
Digital Input Capacitance
DYNAMIC CHARACTERISTICS
t
TRANSITION 1
t
OPEN1
t
ON
(EN)
1
t
OFF
(EN)
1
OFF Isolation
C
S
(OFF)
C
D
(OFF)
ADG506A
ADG507A
Q
INJ
, Charge Injection
POWER SUPPLY
I
DD
I
SS
Power Dissipation
50
200
100
200
100
25
2.4
0.8
1
V1 =
±
10 V, V2 =
10 V; Test Circuit 5
V
IN
= 0 to V
DD
V1 =
±
10 V, V2 = +10 V; Test Circuit 6
Test Circuit 7
Test Circuit 8
Test Circuit 8
V
EN
= 0.8 V, R
L
= 1 kΩ, C
L
= 15 pF,
V
S
= 7 V rms, f = 100 kHz
V
EN
= 0.8 V
V
EN
= 0.8 V
R
S
= 0
Ω,
V
S
= 0 V; Test Circuit 9
400
10
400
400
400
10
400
400
400
10
400
400
mA typ V
IN
= V
INL
or V
lNH
mA max
µA
typ
V
IN
= V
IN
or V
INH
mA max
mW typ
mW max
NOTES
1
Sample tested at +25°C to ensure compliance.
Specifications subject to change without notice.
–2–
REV. C
Single Supply
(V
Parameter
ANALOG SWITCH
Analog Signal Range
R
ON
R
ON
Drift
R
ON
Match
ADG506A/ADG507A
DD
= +10.8 V to +16.5 V, V
SS
= GND = 0 V unless otherwise noted)
ADG506A
ADG506A
ADG507A
ADG507A
K Version
B Version
–40 C to
–40 C to
+25 C +85 C
+25 C +85 C
V
SS
V
DD
500
700
0.6
5
0.02
1
0.04
1
1
0.04
1
1
V
SS
V
DD
1000
V
SS
V
DD
500
700
0.6
5
0.02
1
0.04
1
1
0.04
1
1
V
SS
V
DD
1000
ADG506A
ADG507A
T Version
–55 C to
+25 C +125 C
V
SS
V
DD
500
700
0.6
5
0.02
1
0.04
1
1
0.04
1
1
V
SS
V
DD
1000
Units
Comments
V min
V max
Ω
typ
0 V
≤
V
S
≤
+10 V, I
DS
= 0.5 mA; Test Circuit 1
Ω
max
%/°C typ 0 V
≤
V
S
≤
+10 V, I
DS
= 0.5 mA
% typ
0 V
≤
V
S
≤
+10 V, I
DS
= 0.5 mA
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
nA max
V min
V max
µA
max
pF max
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
dB typ
dB min
pF typ
pF typ
pF typ
pC typ
V1 = +10 V/0 V, V2 = 0 V/ +10 V;
Test Circuit 2
V1 = +10 V/0 V, V2 = 0 V/ +10 V;
Test Circuit 3
V1 = +10 V/0 V, V2 = 0 V/ +10 V;
Test Circuit 4
V1 = +10 V/0 V, V2 = 0 V/ +10 V;
Test Circuit 5
I
S
(OFF), Off Input Leakage
I
D
(OFF), Off Output Leakage
ADG506A
ADG507A
I
D
(ON), On Channel Leakage
ADG506A
ADG507A
I
DIFF
, Differential Off Output
Leakage (ADG507A Only)
DIGITAL CONTROL
V
INH
, Input High Voltage
V
INL
, Input Low Voltage
I
INL
or I
INH
C
IN
Digital Input Capacitance
DYNAMIC CHARACTERISTICS
t
TRANSITION 1
t
OPEN1
t
ON
(EN)
1
t
OFF
(EN)
1
OFF Isolation
C
S
(OFF)
C
D
(OFF)
ADG506A
ADG507A
Q
INJ
, Charge Injection
POWER SUPPLY
I
DD
Power Dissipation
50
200
100
200
100
25
2.4
0.8
1
50
200
100
200
100
25
2.4
0.8
1
50
200
100
200
100
25
2.4
0.8
1
V
IN
= 0 to V
DD
8
300
450
50
25
250
450
250
450
68
50
5
44
22
4
0.6
1.5
10
25
8
300
450
50
25
250
450
250
450
68
50
5
44
22
4
0.6
1.5
10
25
8
300
450
50
25
250
450
250
450
68
50
5
44
22
4
0.6
1.5
10
25
V1 = +10 V/0 V, V2 = +10 V; Test Circuit 6
Test Circuit 7
Test Circuit 8
Test Circuit 8
V
EN
= 0.8 V, R
L
= 1 kΩ, C
L
= 15 pF,
V
S
= 3.5 V rms, f = 100 kHz
V
EN
= 0.8 V
V
EN
= 0.8 V
R
S
= 0
Ω,
V
S
= 0 V; Test Circuit 9
600
10
600
600
600
10
600
600
600
10
600
600
mA typ V
IN
= V
INL
or V
lNH
mA max
mW typ
mW max
NOTES
1
Sample tested at +25°C to ensure compliance.
Specifications subject to change without notice.
Truth Table (ADG506A)
A3
X
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
A2
X
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
A1
X
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
A0
X
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
EN On Switch
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
NONE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Truth Table (ADG507A)
A2
X
0
0
0
0
1
1
1
1
A1
X
0
0
1
1
0
0
1
1
A0
X
0
1
0
1
0
1
0
1
EN On Switch Pair
0
1
1
1
1
1
1
1
1
NONE
1
2
3
4
5
6
7
8
X = Don’t Care
REV. C
–3–
ADG506A/ADG507A
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Analog Inputs
2
Voltage at S, D . . . . . . . . . . . . . . . . . . . . . . . V
SS
– 2 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + 2 V or
. . . . . . . . . . . . . . . . . . . . . . 20 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 20 mA
Pulsed Current S or D
1 ms Duration, 10% Duty Cycle . . . . . . . . . . . . . . . . 40 mA
Digital Inputs
2
Voltage at A, EN . . . . . . . . . . . . . . . . . . . . . . . . . . V
SS
– 4 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to V
DD
+ 4 V or
. . . . . . . . . . . . . . . . . . . . . . 20 mA, Whichever Occurs First
Power Dissipation (Any Package)
Up to +75°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
Derates above +75°C by . . . . . . . . . . . . . . . . . . 6 mW/°C
Operating Temperature
Commercial (K Version) . . . . . . . . . . . . . . –40°C to +85°C
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Overvoltage at A, EN, S or D will be clamped by diodes. Current should be limited
to the Maximum Rating above.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG506A /ADG507A feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
PIN CONFIGURATIONS
DIP, SOIC
LCCC
V
DD
1
NC 2
NC 3
S16 4
S15 5
S14 6
28 D
WARNING!
ESD SENSITIVE DEVICE
PLCC
V
SS
V
DD
S16
NC
NC
V
SS
S8
D
S8
25 S7
24 S6
23 S5
22 S4
21 S3
20 S2
19 S1
12 13
14 15
16 17
18
NC
NC
2
26 S8
25 S7
S6
ADG506A
24
4
3
1
28 27 26
D
27 V
SS
V
DD
S16
4
3
2
1
28 27 26
PIN 1
IDENTIFIER
S15
5
S14
6
S13
7
S12
8
S11
9
S10
10
S9
11
12 13 14 15 16 17 18
25
S7
24
S6
S15 5
S14 6
S13 7
S12 8
S11 9
S10 10
S9 11
TOP VIEW 23 S5
S13 7 (Not to Scale) 22 S4
S12 8
S11 9
S10 10
S9 11
GND 12
NC 13
A3 14
21 S3
20 S2
19 S1
18 EN
ADG506A
TOP VIEW
(Not to Scale)
23
S5
22
S4
21
S3
20
S2
19
S1
ADG506A
TOP VIEW
(Not to Scale)
NC
A3
A2
A1
A0
A3
A2
A1
16 A1
15 A2
GND
EN
17 A0
A0
NC = NO CONNECT
NC = NO CONNECT
GND
NC = NO CONNECT
DIP, SOIC, TSSOP
LCCC
V
DD
1
DB 2
NC 3
S8B 4
S7B 5
S6B 6
28 DA
V
DD
S8A
NC
PLCC
S8B
DB
NC
DA
S8A
25 S7A
24 S6A
23 S5A
22 S4A
21 S3A
20 S2A
19 S1A
12 13
14 15
16 17
18
V
SS
V
DD
26 S8A
25 S7A
S6A
ADG507A
24
S7B
5
S6B
6
S5B
7
S4B
8
S3B
9
S2B
10
S1B
11
4
3
2
1
28 27 26
4
25
S7A
24
S6A
3
2
1
28 27 26
PIN 1
IDENTIFIER
S7B 5
S6B 6
S5B 7
S4B 8
S3B 9
S2B 10
S1B 11
TOP VIEW 23 S5A
S5B 7 (Not to Scale) 22 S4A
S4B 8
S3B 9
S2B 10
S1B 11
GND 12
NC 13
NC 14
21 S3A
20 S2A
19 S1A
18 EN
ADG507A
TOP VIEW
(Not to Scale)
23
S5A
22
S4A
21
S3A
20
S2A
19
S1A
ADG507A
TOP VIEW
(Not to Scale)
NC
A2
A1
A0
A2
A1
A0
GND
NC
15 A2
NC = NO CONNECT
NC = NO CONNECT
NC = NO CONNECT
–4–
NC
EN
16 A1
GND
NC
EN
17 A0
12 13 14 15 16 17 18
V
SS
NC
DB
DA
27 V
SS
S8B
EN
REV. C
Embedded System
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