Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
IXFK 180N085
IXFX 180N085
V
DSS
I
D25
R
DS(on)
=
85 V
= 180 A
=
7 mW
t
rr
£
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C (MOSFET chip capability)
External lead current limit
T
C
= 25°C, Note 1
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
Maximum Ratings
85
85
±20
±30
180
76
720
180
60
3
5
560
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
6
10
g
g
PLUS 247
TM
(IXFX)
G
D (TAB)
D
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
•
•
•
•
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• PLUS 247
TM
package for clip or spring
mounting
• Space savings
• High power density
•
•
•
•
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
0.9/6
300
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
85
2.0
V
4.0 V
±100
nA
T
J
= 25°C
T
J
= 125°C
100
mA
2 mA
7 mW
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
98637 (7/99)
© 2000 IXYS All rights reserved
1-2
IXFK 180N085
IXFX 180N085
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Note 2
55
75
9100
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
4000
2000
65
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
W
(External),
90
140
55
320
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
65
170
0.22
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
PLUS247
TM
(IXFX) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 60A
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
I
F
= 100A, V
GS
= 0 V, Note 1
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
180
720
1.3
250
A
A
V
ns
mC
A
TO-264 AA Outline
I
F
= 50A,-di/dt = 100 A/ms, V
R
= 50 V
1.2
10
Note: 1. Pulse width limited by T
JM
2. Pulse test, t
£
300
ms,
duty cycle d
£
2 %
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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