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SRAF1040R

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
CategoryDiscrete semiconductor    diode   
File Size187KB,2 Pages
ManufacturerMOSPEC
Websitehttp://www.mospec.com.tw/eng/index.html
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SRAF1040R Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN

SRAF1040R Parametric

Parameter NameAttribute value
MakerMOSPEC
package instructionR-PSFM-T2
Reach Compliance Codeunknown
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current175 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage40 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

SRAF1040R Preview

MOSPEC
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
…Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 125℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
SRAF1030 thru SRAF1060
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
30-60 VOLTS
ITO-220AC
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Peak Repetitive Forward Current
(Rate V
R
, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
Symbol
30
V
RRM
V
RWM
V
R
V
R(RMS)
I
F(AV)
30
35
35
SRAF10
40
40
45
45
50
50
60
60
V
Unit
21
25
28
10
32
35
42
V
DIM
A
I
FM
20
V
I
FSM
175
V
T
J
, T
STG
-65 to +125
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
O
Q
MILLIMETERS
MIN
MAX
15.05
15.15
13.35
13.45
10.00
10.10
6.55
6.65
2.65
2.75
---
1.00
1.15
1.25
0.55
0.65
4.80
5.20
3.00
3.20
1.10
1.20
0.55
0.65
4.40
4.60
1.15
1.25
2.65
2.75
3.35
3.45
3.15
3.25
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I
F
=10 Amp T
C
= 25℃)
( I
F
=10 Amp T
C
= 125℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T
C
= 25℃)
( Rated DC Voltage, T
C
= 125℃)
Symbol
30
V
F
35
SRAF10
40
45
50
60
V
Unit
0.55
0.48
0.65
0.57
I
R
1.0
50
mA
SRAF1030 thru SRAF1060
FIG-1 FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT (Amp.)
NSTANTANEOUS FORWARD CURRENT (Amp.)
FIG-2 TYPICAL FORWARD CHARACTERISITICS
SRAF1030-SRAF1045
SRAF1050,SRAF1060
CASE TEMPERATURE (℃)
FORWARD VOLTAGE (Volts)
FIG-3 TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (Amp.)
FIG-4 TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE (
P
F)
SRAF1030-SRAF1045
SRAF1050,SRAF1060
SRAF1030-SRAF1045
SRAF1050,SRAF1060
PERCENT OF RATED REVERSE VOLTAGE (﹪)
REVERSE VOLTAGE (Volts)
FIG-5 PEAK FORWARD SURGE CURRENT
CURRENT (Amp.)
PEAK FORWARD SURGE
NUMBER OF CYCLES AT 60 Hz

SRAF1040R Related Products

SRAF1040R SRAF1030R SRAF1030P SRAF1040P SRAF1050P SRAF1050R SRAF1060P SRAF1060R
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 60V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 60V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
Maker MOSPEC MOSPEC MOSPEC MOSPEC MOSPEC MOSPEC MOSPEC MOSPEC
package instruction R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Other features FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.55 V 0.55 V 0.55 V 0.55 V 0.65 V 0.65 V 0.65 V 0.65 V
JEDEC-95 code TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
JESD-30 code R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
Maximum non-repetitive peak forward current 175 A 175 A 175 A 175 A 175 A 175 A 175 A 175 A
Number of components 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 40 V 30 V 30 V 40 V 50 V 50 V 60 V 60 V
Maximum reverse current 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA
surface mount NO NO NO NO NO NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE

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