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Datasheet> All Categories > storage> storage> IDT8MP612L100S
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IDT8MP612L100S

Description
SRAM Module, 32KX16, 100ns, CMOS
Categorystorage    storage   
File Size173KB，7 Pages
ManufacturerIDT (Integrated Device Technology)
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IDT8MP612L100S Overview

SRAM Module, 32KX16, 100ns, CMOS

IDT8MP612L100S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time100 ns
Other featuresTTL COMPATIBLE INPUTS/OUTPUTS
I/O typeCOMMON
JESD-30 codeR-XSMA-T40
JESD-609 codee0
memory density524288 bit
Memory IC TypeSRAM MODULE
memory width16
Number of functions1
Number of terminals40
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX16
Output characteristics3-STATE
Package body materialUNSPECIFIED
Encapsulate equivalent codeSIP40,.1
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.0003 A
Minimum standby current4.5 V
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

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IDT8MP612L100S Related Products

IDT8MP612L100S IDT8MP612L85S IDT8MP612L70S IDT8MP624L85S IDT8MP624L100S IDT8MP624L70S
Description SRAM Module, 32KX16, 100ns, CMOS SRAM Module, 32KX16, 85ns, CMOS SRAM Module, 32KX16, 70ns, CMOS SRAM Module, 64KX16, 85ns, CMOS SRAM Module, 64KX16, 100ns, CMOS SRAM Module, 64KX16, 70ns, CMOS
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code not_compliant _compli not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 100 ns 85 ns 70 ns 85 ns 100 ns 70 ns
Other features TTL COMPATIBLE INPUTS/OUTPUTS TTL COMPATIBLE INPUTS/OUTPUTS TTL COMPATIBLE INPUTS/OUTPUTS TTL COMPATIBLE INPUTS/OUTPUTS TTL COMPATIBLE INPUTS/OUTPUTS TTL COMPATIBLE INPUTS/OUTPUTS
I/O type COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-XSMA-T40 R-XSMA-T40 R-XSMA-T40 R-XSMA-T40 R-XSMA-T40 R-XSMA-T40
JESD-609 code e0 e0 e0 e0 e0 e0
memory density 524288 bit 524288 bi 524288 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE
memory width 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1
Number of terminals 40 40 40 40 40 40
word count 32768 words 32768 words 32768 words 65536 words 65536 words 65536 words
character code 32000 32000 32000 64000 64000 64000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 32KX16 32KX16 32KX16 64KX16 64KX16 64KX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Encapsulate equivalent code SIP40,.1 SIP40,.1 SIP40,.1 SIP40,.1 SIP40,.1 SIP40,.1
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 225 225 NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.0003 A 0.0003 A 0.0003 A 0.0004 A 0.0004 A 0.0004 A
Minimum standby current 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Maximum slew rate 0.15 mA 0.15 mA 0.15 mA 0.15 mA 0.15 mA 0.15 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 30 30 NOT SPECIFIED
Maker IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)

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