Advance Technical Information
Trench
TM
P & N-Channel
Power MOSFET
Common Drain Topology
FMP76-01T
V
DSS
3
4
5
4
3
P CH.
- 100V
- 54A
24mΩ
Ω
70ns
N CH.
100V
62A
11mΩ
Ω
67ns
T1
T2
I
D25
R
DS(on)
t
rr(typ)
1
1
2
2
ISOPLUS i4-Pak
TM
Symbol
T
J
T
JM
T
stg
V
ISOLD
T
L
T
SOLD
F
C
50/60H
Z
, RMS, t = 1min, leads-to-tab
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
Test Conditions
Maximum Ratings
-55 ... +150
150
-55 ... +150
2500
300
260
20..120 / 4.5..27
°C
°C
°C
~V
°C
°C
N/lb.
Features
Symbol
C
P
d
S
,d
A
d
S
,d
A
Weight
Test Conditions
Coupling capacitance between shorted
pins and mounting tab in the case
pin - pin
pin - backside metal
1.7
5.5
9
Characteristic Values
Min.
Typ.
Max.
40
pF
mm
mm
g
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low Q
G
Low Drain-to-Tab capacitance
Low package inductance
1
Isolated Tab
5
P - CHANNEL
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
- 100
- 100
±
20
±
30
- 54
- 230
- 38
1.0
132
V
V
V
V
A
A
A
J
W
Advantages
Low gate drive requirement
High power density
Low drain to ground capacitance
Fast switching
Applications
DC and AC motor drives
Class AB audio amplifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS100037(09/08)
FMP76-01T
Symbol
Test Conditions
2
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= -10V, V
DS
= 0.5 V
DSS
, I
D
= - 38A
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5
R
G
= 1Ω (External)
V
DSS
, I
D
= - 38A
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
GS
= 0V, I
D
= - 250
μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±20
V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
- 100
- 2.0
- 4.0
±
100
V
V
nA
ISOPLUS i4-Pak
TM
Outline
-15
μA
- 750
μA
24 mΩ
35
58
13.7
890
275
25
40
52
20
197
65
65
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.95
°C/W
°C/W
Ref: IXYS CO 0077 R0
V
GS
= -10V, I
D
= - 38A, Note 1
V
DS
= -10V, I
D
= - 38A, Note 1
Drain-Source Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
2
V
GS
= 0V
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ.
Max.
- 54
- 304
- 1.3
70
215
-6
A
A
V
ns
nC
A
Repetitive, pulse width limited by T
JM
I
F
= - 38A, V
GS
= 0V, Note 1
I
F
= - 38A, di/dt = 100A/μs
V
R
= - 50V, V
GS
= 0V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
FMP76-01T
N - CHANNEL
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
100
100
±
20
62
300
65
500
89
V
V
V
A
A
A
mJ
W
Symbol
Test Conditions
2
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
GS
= 10V, V
DS
= 0.5
V
DSS
, I
D
= 25A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 V
DSS
, I
D
= 25A
R
G
= 5Ω (External)
V
GS
= 0V, V
DS
= 25 V, f = 1 MHz
V
GS
= 0V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±20
V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
V
GS
= 10V, I
D
= 25A, (Note 1)
V
DS
= 10V, I
D
= 60A, (Note 1)
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
100
2.5
4.5
±
200
V
V
nA
5
μA
250
μA
11 mΩ
55
93
5080
635
95
30
47
44
28
104
30
29
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.4
°C/W
0.15
°C/W
© 2008 IXYS CORPORATION, All rights reserved
FMP76-01T
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
3
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= 25A, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 50V, V
GS
= 0V
67
160
4.7
Characteristic Values
T
J
= 25°C unless otherwise specified)
Min. Typ.
Max.
62
350
1.0
A
A
V
ns
nC
A
Note 1: Pulse test, t
≤
300μs, duty cycle, d
≤
2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
京公网安备 11010802033920号
EEWORLD
