27.0-32.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 25-Jan-10
P1026-BD
Chip Device Layout
Features
Ka-Band 2W Power Amplifier
21.0 dB Small Signal Gain
+33.0 dBm Saturated Output Power
+40.0 dBm Output Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband's three stage 27.0-32.0 GHz GaAs
MMIC power amplifier has a small signal gain of 21.0
dB with +33 dBm saturated output power. This MMIC
uses Mimix Broadband’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
1
+6.0 VDC
2
165,415,790 mA
+0.3 VDC
+22 dBm
-65 to +165 ºC
-55 to 85 ºC
175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(2) Under pulsed bias conditions, under CW Psat conditions
further reduction in max supply voltage (~0.5V) is
recommended.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
2
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Saturated Output Power (Psat)
2
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.5V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.5V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.5V, Vg=-0.7V Typical)
(2) Measured on wafer pulsed
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
mA
mA
Min.
27.0
-
-
-
-
-
-
-
-
-
-1.2
-
-
-
Typ.
-
10.0
15.0
21.0
+/-1.0
50.0
+32.0
+40.0
+33.0
+5.5
-0.7
100
250
550
Max.
32.0
-
-
-
-
-
-
-
-
+5.8
0.0
150
350
750
Page 1 of 10
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
27.0-32.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 25-Jan-10
P1026-BD
XP1026-BD Vd=5.0 V, Vg=-0.9 V, Id1=84 mA
Id2=218 mA, Id3=450 mA
30
20
Power Amplifier Measurements (On-Wafer
1
)
XP1026-BD Vd=5.0 V, Vg=-0.9 V, Id1=84 mA
Id2=218 mA, Id3=450 mA
26
25
23
Gain/Reverse Isolation (dB)
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
24
10
0
-10
-20
-30
-40
-50
-60
-70
20.0
Gain (dB)
22
21
20
19
18
17
16
26.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz)
Frequency (GHz)
XP1026-BD Vd=5.0 V, Vg=-0.9 V, Id1=84 mA
Id2=218 mA, Id3=450 mA
0
0
XP1026-BD Vd=5.0 V, Vg=-0.9 V, Id1=84 mA
Id2=218 mA, Id3=450 mA
-5
-5
Input Return Loss (dB)
Input Return Loss (dB)
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
-10
-10
-15
-15
-20
-20
-25
26.0
-25
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz)
Frequency (GHz)
XP1026-BD Vd=5.0 V, Vg=-0.9 V, Id1=84 mA
Id2=218 mA, Id3=450 mA
0
0
XP1026-BD Vd=5.0 V, Vg=-0.9 V, Id1=84 mA
Id2=218 mA, Id3=450 mA
Output Return Loss (dB)
-10
Output Return Loss (dB)
-5
-5
-10
-15
-15
-20
-20
-25
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
-25
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz)
Frequency (GHz)
Note [1] Measurements –
On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um
in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 10
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
27.0-32.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 25-Jan-10
P1026-BD
XP1026-BD Vd=Varied, Vg=-0.9 V, Id1=87 mA
Id2=222 mA, Id3=409 mA
35
34
33
32
31
30
29
28
27
26
25
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
Power Amplifier Measurements (On-Wafer
1
) (cont.)
Frequency (GHz)
Vd=5.0V
Vd=5.5V
Vd=6.0V
XP1026-BD Vd=Varied, Vg=-0.9 V, Id1=90 mA
Id2=234 mA, Id3=462 mA, Freq=30 GHz
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
20
21
22
23
PAE (%) and Gain (dB)
Gain
PAE, Vd=5.0V
PAE, Vd=5.5V
PAE, Vd=6.0V
Gain, Vd=5.0V
Gain, Vd=5.5V
Gain, Vd=6.0V
27
28
29
30
31
32
33
34
PAE
24
25
26
XP1026-BD Vd=Varied, Vg=-0.9 V, Id1=90 mA
Id2=234 mA, Id3=462 mA, Freq=30 GHz
800
Drain current Id1, Id2 and Id3 (mA)
700
600
500
400
300
200
100
0
20
Id1, Vd=5.0V
Id2, Vd=5.0V
Id3, Vd=5.0V
Id1, Vd=5.5V
Id2, Vd=5.5V
Id3, Vd=5.5V
Id1, Vd=6.0V
Id2, Vd=6.0V
Id3, Vd=6.0V
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Note [1] Measurements –
On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 10
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
27.0-32.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 25-Jan-10
P1026-BD
XP1026-BD Vd=6.0 V, Vg=-0.9 V, Id1=80 mA
55
Power Amplifier Measurements (On-Wafer
1
) (cont.)
XP1026-BD Vd=6.0 V, Vg=-0.9 V, Id1=80 mA
42
Output Third Order Intercept (dBm)
40
39
38
37
36
35
34
33
32
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Output Third Order Intermods (dBc)
41
50
45
40
35
30
25
20
15
10
5
0
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
28 GHz
29 GHz
30 GHz
31 GHz
32 GHz
XP1026-BD Vd=Varied, Vg=-0.8 V, Id1=95 mA
42
XP1026-BD Vd=Varied, Vg=-0.9 V, Id1=80 mA
42
41
40
39
38
37
36
35
34
33
32
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
6
Output Third Order Intercept (dBm)
40
39
38
37
36
35
34
33
32
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Vd=4.0V
Vd=4.5V
Vd=5.0V
Vd=5.5V
Vd=6.0V
Output Third Order Intercept (dBm)
41
Vd=4.0V
Vd=4.5V
Vd=5.0V
Vd=5.5V
Vd=6.0V
XP1026-BD Vd=6.0 V, Vg & Id1=Varied
43
42
Output Third Order Intercept (dBm)
41
40
39
38
37
36
35
34
33
32
31
30
29
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Vg=-1.1V, Id1=50 m A, Id2=132 m A, Id3=261 m A
Vg=-1.0V, Id1=64 m A, Id2=139 m A, Id3=334 m A
Vg=-0.9V, Id1=80 m A, Id2=207 m A, Id3=411 m A
Vg=-0.8V, Id1=95 m A, Id2=250 m A, Id3=491 m A
Vg=-0.7V, Id1=113 m A, Id2=295 m A, Id3=577 m A
Vg=-0.6V, Id1=131 m A, Id2=342 m A, Id3=662 m A
Note [1] Measurements –
On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 10
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
27.0-32.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 25-Jan-10
P1026-BD
XP1026-BD-EV1 Vd=6.0V, Id=900 mA
38
37
36
Power Amplifier Measurements (Test Fixture
1
)
XP1026-BD-EV1 Vd=6.0V, Id=900 mA
33
32
31
30
Output Power Psat (dBm)
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
29
28
27
26
25
24
23
22
21
20
19
18
26.5
35
34
33
32
31
30
29
28
26.5
Gain (dB)
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
Frequency (GHz)
Frequency (GHz)
0
-5
-10
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
26.5
XP1026-BD-EV1 Vd=6.0V, Id=900 mA
XP1026-BD-EV1 Vd=6.0V, Id=900 mA
Output Return Loss (dB)
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
Input Return Loss (dB)
-15
-20
-25
-30
-35
-40
-45
26.5
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
Frequency (GHz)
Frequency (GHz)
Note [1] Measurements –
Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic
circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 10
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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