FAN7190_F085 - High-Current, High & Low Side, Gate-Drive IC
May 2010
FAN7190_F085
High-Current, High & Low-Side, Gate-Drive IC
Features
Floating Channels for Bootstrap Operation to +600V
Typically 4.5A/4.5A Sourcing/Sinking Current Driving
Description
The FAN7190_F085 is a monolithic high- and low-side
gate-drive IC, which can drive high speed MOSFETs and
IGBTs that operate up to +600V. It has a buffered output
stage with all NMOS transistors designed for high pulse
current driving capability and minimum cross-conduction.
Fairchild’s high-voltage process and common-mode
noise canceling techniques provide stable operation of
the high-side driver under high dv/dt noise circumstances.
An advanced level shift circuit offers high-side gate driver
operation up to V
S
=-9.8V (typical) for V
BS
=15V.
The UVLO circuit prevents malfunction when V
DD
and
V
BS
are lower than the specified threshold voltage.
The high current and low output voltage drop feature
make this device suitable for magnetic- and piezo type
injectors and general MOSFET/IGBT based high side
driver applications
.
8-SOP
Capability
Common-Mode dv/dt Noise Canceling Circuit
Built-in Under-Voltage Lockout for Both Channels
Matched Propagation Delay for Both Channels
3.3V and 5V Input Logic Compatible
Output In-phase with Input
Applications
Diesel and gasoline Injectors/Valves
MOSFET-and IGBT high side driver applications
Ordering Information
Part Number
FAN7190M
FAN7190MX
Package
8-SOP
Operating
Temperature Range
-40C ~ 125C
Eco Status
RoHS
Packing Method
Tube
Tape & Reel
For Fairchild’s definition of “green” Eco Status, please visit:
http://www.fairchildsemi.com/company/green/rohs_green.html.
© 2010 Fairchild Semiconductor Corporation
FAN7190_F085 Rev. 1.0.0
www.fairchildsemi.com
FAN7190_F085 - High-Current, High & Low Side, Gate-Drive IC
Typical Application Circuit
15V
FAN7190_F085
R
BOOT
Up to 600V
D
BOOT
HIN
1
HIN
V
B
8
Q1
Controller
LIN
2
LIN
HO
7
C
BOOT
R1
R2
3
COM
V
S
6
OUTPUT
4
LO
V
DD
5
C1
R3
Q2
Load
R4
FAN7190_F085 Rev.01
Figure 1. Application Circuit for Half-Bridge
Internal Block Diagram
FAN7190_F085
UVLO
DRIVER
8
V
B
HIN
1
200K
NOISE
CANCELLER
R
S
R
Q
7
HO
PULSE
GENERATOR
UVLO
6
V
S
5
V
DD
LIN
2
200K
DELAY
DRIVER
V
SS
/COM
LEVEL
SHIFT
4
LO
3
COM
FAN7190_F085 Rev. 01
Figure 2. Functional Block Diagram
© 2010 Fairchild Semiconductor Corporation
FAN7190_F085 Rev. 1.0.0
www.fairchildsemi.com
2
FAN7190_F085 - High-Current, High & Low Side, Gate-Drive IC
Pin Configurations
FAN7190M_F085
FAN7190MX_F085
HIN
LIN
COM
LO
1
2
8
7
V
B
HO
V
S
V
DD
FAN7190_F085
3
4
6
5
FAN7190_F085 Rev.01
Figure 3. Pin Assignments (Top View)
Pin Definitions
8-Pin
1
2
3
4
5
6
7
8
Name
HIN
LIN
COM
LO
V
DD
V
S
HO
V
B
Description
Logic Input for High-Side Gate Driver Output
Logic Input for Low-Side Gate Driver Output
Low-Side Driver Return
Low-Side Driver Output
Low-Side and Logic Part Supply Voltage
High-Voltage Floating Supply Return
High-Side Driver Output
High-Side Floating Supply
© 2010 Fairchild Semiconductor Corporation
FAN7190_F085 Rev. 1.0.0
www.fairchildsemi.com
3
FAN7190_F085 - High-Current, High & Low Side, Gate-Drive IC
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. -40C <=T
A
<= 125C, unless otherwise specified.
Symbol
V
S
V
B
V
HO
V
DD
V
LO
V
IN
dV
S
/dt
P
D(1)(2)(3)
JA
T
J
T
STG
Notes:
Characteristics
High-Side Floating Supply Offset Voltage
High-Side Floating Supply Voltage
High-Side Floating Output Voltage HO
Low-Side and Logic Fixed Supply Voltage
Low-Side Output Voltage LO
Logic Input Voltage (HIN and LIN)
Allowable Offset Voltage Slew Rate
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Junction Temperature
Storage Temperature
Min.
V
B
-25
-0.3
V
S
-0.3
-0.3
-0.3
-0.3
8-SOP
8-SOP
Max.
V
B
+0.3
625.0
V
B
+0.3
25.0
V
DD
+0.3
V
DD
+0.3
50
0.625
200
+150
+150
Unit
V
V
V
V
V
V
V/ns
W
C/W
C
C
1. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).
2. Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions - natural convection
JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages
3. Do not exceed P
D
under any circumstances.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
V
B
V
S
V
HO
V
DD
V
LO
V
IN
T
A
Parameter
High-Side Floating Supply Voltage
High-Side Floating Supply Offset Voltage
High-Side Output Voltage
Low-Side and Logic Supply Voltage
Low-Side Output Voltage
Logic Input Voltage (HIN and LIN)
Operating Ambient Temperature
Min.
V
S
+10
6-V
DD
V
S
10
COM
COM
-40
Max.
V
S
+22
600
V
B
22
V
DD
V
DD
+125
Unit
V
V
V
V
V
V
C
© 2010 Fairchild Semiconductor Corporation
FAN7190_F085 Rev. 1.0.0
www.fairchildsemi.com
4
FAN7190_F085 - High-Current, High & Low Side, Gate-Drive IC
Electrical Characteristics
V
BIAS
(V
DD
, V
BS
)=15.0V, V
S
=COM, -40C <=T
A
<= 125C, unless otherwise specified. The V
IL
, V
IH
, and I
IN
parameters
are referenced to COM and are applicable to the respective input signals HIN and LIN. The V
O
and I
O
parameters are
referenced to COM and V
S
is applicable to the respective output signals HO and LO.
Symbol
V
DDUV+
V
BSUV+
V
DDUV-
V
BSUV-
Characteristics
V
DD
and V
BS
Supply Under-Voltage
Positive-going Threshold
V
DD
and V
BS
Supply Under-Voltage
Negative-going Threshold
Test Condition
Min.
Typ.
Max. Unit
POWER SUPPLY SECTION (V
DD
AND V
BS
)
7.8
7.2
8.8
8.3
0.5
V
B
=V
S
=600V
V
IN
=0V or 5V
V
IN
=0V or 5V
f
IN
=20kHz, rms value
f
IN
=20kHz, rms value
2.5
1.2
V
IN
=5V
V
IN
=0V
100
No Load
No Load
V
O
=0V, V
IN
=5V with PW<10µs
V
O
=15V, V
IN
=0V with
PW<10µs
V
O
=3.0V, I
O, source
=250mA
V
O
=2.0V, I
O, sink
=250mA
-9.8
3.5
3.5
4.5
A
4.5
12
8
-7.0
V
25
1.0
200
1.5
35
50
2.0
45
75
530
530
50
110
150
700
750
µA
µA
9.8
9.1
V
V
DDUVH
V
DD
and V
BS
Supply Under-Voltage
V
BSUVH
Lockout Hysteresis Voltage
I
LK
I
QBS
I
QDD
I
PBS
I
PDD
V
IH
V
IL
I
IN+
I
IN-
R
IN
V
OH
V
OL
I
O+
I
O-
R
outH
R
outL
V
S
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Quiescent V
DD
Supply Current
Operating V
BS
Supply Current
Operating V
DD
Supply Current
Logic "1" Input Voltage
Logic "0" Input Voltage
Logic "1" Input Bias Current
Logic "0" Input Bias Current
Input Pull-down Resistance
High-level Output Voltage, V
BIAS
-V
O
Low-level Output Voltage, V
O
Output High, Short-circuit Pulsed
Current
(4)
Output Low, Short-circuit Pulsed
Current
(4)
Output driver impedance
(4)
Output driver impedance
(4)
Allowable Negative V
S
Pin Voltage for
HIN Signal Propagation to HO
LOGIC INPUT SECTION (HIN, LIN)
V
µA
K
V
mV
GATE DRIVER OUTPUT SECTION (HO, LO)
Note:
4. This parameter guaranteed by design.
Dynamic Electrical Characteristics
V
BIAS
(V
DD
, V
BS
)=15.0V, V
S
=COM=0V, C
L
=1000pF and -40C <=T
A
<= 125C unless otherwise specified.
Symbol
t
on
t
off
MT
t
r
t
f
Characteristics
Turn-on Propagation Delay
Turn-off Propagation Delay
Delay Matching, HS & LS Turn-on/off
Turn-on Rise Time
Turn-off Fall Time
Test Condition
V
S
=0V
V
S
=0V
Min.
Typ.
140
140
0
25
20
Max.
200
200
50
50
45
Unit
ns
© 2010 Fairchild Semiconductor Corporation
FAN7190_F085 Rev. 1.0.0
www.fairchildsemi.com
5
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