DF02 datasheet, PDF - EEWORLD Datasheet

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DF02: Description1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size93KB，3 Pages; ManufacturerHY Electronic; Websitehttp://www.hygroup.com.tw

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DF02 Overview

1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

DF02 Parametric

Parameter Name	Attribute value
Maker	HY Electronic
package instruction	R-PDIP-T4
Reach Compliance Code	unknow
ECCN code	EAR99
Minimum breakdown voltage	1000 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PDIP-T4
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL

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DF005 thru DF10

GLASS PASSIVATED

BRIDGE RECTIFIERS

FEATURES

●

Rating to 1000V PRV

●

Ideal for printed circuit board

●

Low forward voltage drop,high current capability

●

Reliable low cost construction utilizing molded plastic

.031(0.8)

.023(0.6)

.256(6.5)

.244(6.2)

REVERSE VOLTAGE

- 50

1000Volts

FORWARD CURRENT

- 1.0

Ampere

.335(8.5)

.307(7.8)

technique results in inexpensive product

●

The plastic material has UL flammability

classification 94V-0

.323(8.2)

.315(8.0)

.102(2.6)

.089(2.2)

.350(8.9)

.311(7.9)

MECHANICAL DATA

●

Polarit:As marked on Body

●

Weight:0.02 ounces,0.38 grams

●

mounting position:Any

.022(0.55)

.018(0.45)

.079(2.0)

.059(1.5)

.193(4.9)

.165(4.2)

.205(5.2)

.197(5.0)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load

Maximum Forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Bolcking Voltage

t Rating for Fusing(t<8.3ms)

Typical Junction Capacitance Per Element

Typical Thermal Resistance (Note2)

Operating Temperature Range

Storage Temperature Range

(Note1)

=25℃

=125℃

=40℃

SYMBOL

RRM

RMS

(AV)

DF005

DF01

100

DF02

200

140

200

DF04

400

280

400

1.0

DF06

600

420

600

DF08

800

560

800

DF10

1000

700

1000

UNIT

FSM

θJA

STG

1.1

500

10.4

-55 to +150

μA

℃/W

℃

Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC

2.Thermal resistance from junction to ambient mounted on P.C.B

with 0.5*0.5"(13*13mm) copper pads.

~ 374 ~

DF02 Related Products

	DF02	DF005	DF01	DF04	DF06	DF08	DF10	DF005_1
Description	1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Maker	HY Electronic	HY Electronic	-	HY Electronic	HY Electronic	HY Electronic	HY Electronic	-
package instruction	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknown	-
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-
Minimum breakdown voltage	1000 V	50 V	1000 V	600 V	600 V	800 V	1000 V	-
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-
JESD-30 code	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	-
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A	30 A	30 A	-
Number of components	4	4	4	4	4	4	4	-
Phase	1	1	1	1	1	1	1	-
Number of terminals	4	4	4	4	4	4	4	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	-
Maximum repetitive peak reverse voltage	1000 V	50 V	1000 V	600 V	600 V	800 V	1000 V	-
surface mount	NO	NO	NO	NO	NO	NO	NO	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	-

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