DF005_1 datasheet, PDF - EEWORLD Datasheet

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DF005_1: Description1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size93KB，3 Pages; ManufacturerHY Electronic; Websitehttp://www.hygroup.com.tw

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DF005_1 Overview

1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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DF005 thru DF10

GLASS PASSIVATED

BRIDGE RECTIFIERS

FEATURES

●

Rating to 1000V PRV

●

Ideal for printed circuit board

●

Low forward voltage drop,high current capability

●

Reliable low cost construction utilizing molded plastic

.031(0.8)

.023(0.6)

.256(6.5)

.244(6.2)

REVERSE VOLTAGE

- 50

to

1000Volts

FORWARD CURRENT

- 1.0

Ampere

DF

.335(8.5)

.307(7.8)

technique results in inexpensive product

●

The plastic material has UL flammability

classification 94V-0

.323(8.2)

.315(8.0)

.102(2.6)

.089(2.2)

.350(8.9)

.311(7.9)

MECHANICAL DATA

●

Polarit:As marked on Body

●

Weight:0.02 ounces,0.38 grams

●

mounting position:Any

.022(0.55)

.018(0.45)

.079(2.0)

.059(1.5)

.193(4.9)

.165(4.2)

.205(5.2)

.197(5.0)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load

Maximum Forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Bolcking Voltage

I

2

t Rating for Fusing(t<8.3ms)

Typical Junction Capacitance Per Element

Typical Thermal Resistance (Note2)

Operating Temperature Range

Storage Temperature Range

(Note1)

@T

J

=25℃

@T

J

=125℃

@T

A

=40℃

SYMBOL

V

RRM

V

RMS

V

DC

I

(AV)

DF005

50

35

50

DF01

100

70

100

DF02

200

140

200

DF04

400

280

400

1.0

DF06

600

420

600

DF08

800

560

800

DF10

1000

700

1000

UNIT

V

A

I

FSM

V

F

I

R

I

2

t

C

J

R

θJA

TJ

T

STG

30

1.1

10

500

10.4

25

40

-55 to +150

A

V

μA

A

2

s

pF

℃/W

℃

Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC

2.Thermal resistance from junction to ambient mounted on P.C.B

with 0.5*0.5"(13*13mm) copper pads.

~ 374 ~

DF005_1 Related Products

	DF005_1	DF005	DF02	DF01	DF04	DF06	DF08	DF10
Description	1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Maker	-	HY Electronic	HY Electronic	-	HY Electronic	HY Electronic	HY Electronic	HY Electronic
package instruction	-	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	unknow	unknown
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	-	50 V	1000 V	1000 V	600 V	600 V	800 V	1000 V
Configuration	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	-	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4
Maximum non-repetitive peak forward current	-	30 A	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	-	4	4	4	4	4	4	4
Phase	-	1	1	1	1	1	1	1
Number of terminals	-	4	4	4	4	4	4	4
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	-	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Maximum repetitive peak reverse voltage	-	50 V	1000 V	1000 V	600 V	600 V	800 V	1000 V
surface mount	-	NO	NO	NO	NO	NO	NO	NO
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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