Polar
TM
Power MOSFET
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH15N100P
IXFV15N100P
IXFV15N100PS
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
1000V
15A
760mΩ
Ω
300ns
PLUS220 (IXFV)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
1000
1000
±
30
±
40
15
40
7.5
500
15
543
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
G
D
S
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
TO-247 (IXFH)
D (TAB)
G = Gate
S = Source
Features
D
= Drain
TAB = Drain
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
Mounting force (PLUS 220)
TO-247
PLUS 220 types
300
260
1.13/10
11..65/2.5..14.6
6
4
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1000
3.5
6.5
±
100
V
V
nA
Easy to mount
Space savings
High power density
Applications:
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
25
μA
1.0 mA
670
760 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2008 IXYS CORPORATION, All rights reserved
DS99891A(4/08)
IXFH15N100P IXFV15N100P
IXFV15N100PS
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
(TO-247, PLUS220)
0.21
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Gate input resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
6.5
10.5
5140
322
43
1.20
41
44
44
58
97
38
42
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
0.23
°C/W
°C/W
PLUS220 (IXFV) Outline
Source-Drain Diode
T
J
= 25°C unless otherwise specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 7.5A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
15
60
1.5
A
A
V
TO-247 (IXFH) Outline
300 ns
0.6
7
μC
A
∅
P
Note 1: Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
PLUS220SMD (IXFV_S) Outline
Dim.
e
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
7,157,338B2
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFH15N100P IXFV15N100P
IXFV15N100PS
Fig. 1. Output Characteristics
@ 25ºC
16
14
12
21
V
GS
= 10V
9V
30
27
24
V
GS
= 10V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
9V
10
8
6
4
7V
2
0
0
2
4
6
8
10
12
8V
I
D
- Amperes
18
15
12
9
6
3
0
0
3
6
9
12
15
18
21
24
27
30
7V
8V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125ºC
16
14
12
8V
V
GS
= 10V
9V
3.0
2.8
2.6
Fig. 4. R
DS(on)
Normalized to I
D
= 7.5A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 7.5A
I
D
= 15A
I
D
- Amperes
10
8
7V
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
6V
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 7.5A Value
vs. Drain Current
2.6
2.4
V
GS
= 10V
T
J
= 125ºC
16
14
12
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.2
I
D
- Amperes
T
J
= 25ºC
0
3
6
9
12
15
18
21
24
27
30
2
1.8
1.6
1.4
1.2
1
0.8
10
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFH15N100P IXFV15N100P
IXFV15N100PS
Fig. 7. Input Admittance
16
14
12
T
J
= 125ºC
25ºC
- 40ºC
18
16
14
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
12
10
8
6
10
8
6
4
2
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
T
J
= - 40ºC
25ºC
125ºC
4
2
0
0
2
4
6
8
10
12
14
16
18
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
45
40
35
16
14
12
V
DS
= 500V
I
D
= 7.5A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
30
25
20
15
10
5
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
T
J
= 125ºC
T
J
= 25ºC
V
GS
- Volts
10
8
6
4
2
0
0
20
40
60
80
100
120
140
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1.000
Fig. 12. Maximum Transient Thermal
Impedance
Capacitance - PicoFarads
Ciss
Z
(th)JC
- ºC / W
30
35
40
1,000
0.100
Coss
100
f
= 1 MHz
10
0
5
10
15
20
Crss
0.010
0.0001
25
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_15N100P(76)4-1-08-A
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