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IXFH40N50Q2_08

Description
HiPerFET Power MOSFETs Q2-Class
File Size147KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Download Datasheet View All

IXFH40N50Q2_08 Overview

HiPerFET Power MOSFETs Q2-Class

HiPerFET
TM
Power MOSFETs
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
, low t
rr
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6mm (0.063 in) from case for 10s
Mounting torque
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
IXFH40N50Q2
V
DSS
=
=
I
D25
R
DS(on)
t
rr
TO-247 (IXFH)
500V
40A
160mΩ
Ω
250ns
Maximum Ratings
500
500
±30
±40
40
160
40
2.5
20
560
-55 ... +150
150
-55 ... +150
300
1.13/10
6
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
Double metal process for low gate
resistance
International standard package
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
G = Gate
S = Source
D = Drain
TAB = Drain
G
(TAB)
D
S
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
500
3.0
5.5
±200
V
V
nA
Advantages
Easy to mount
Space savings
High power density
25
μA
1 mA
160
V
GS
= 10V, I
D
= 0.5 • I
D25,
Note 1
© 2008 IXYS CORPORATION, All rights reserved
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