HYM322160S-60 datasheet, PDF - EEWORLD Datasheet

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HYM322160S-60: DescriptionFast Page DRAM Module, 2MX32, 60ns, CMOS, SIMM-72; Categorystorage storage; File Size89KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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HYM322160S-60 Overview

Fast Page DRAM Module, 2MX32, 60ns, CMOS, SIMM-72

HYM322160S-60 Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	SIMM
package instruction	SIMM, SSIM72
Contacts	72
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width	16
I/O type	COMMON
JESD-30 code	R-XSMA-N72
memory density	67108864 bit
Memory IC Type	FAST PAGE DRAM MODULE
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	72
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX32
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	SIMM
Encapsulate equivalent code	SSIM72
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	25.4 mm
self refresh	NO
Maximum standby current	0.016 A
Maximum slew rate	0.88 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	SINGLE

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2M x 32-Bit Dynamic RAM Module

HYM 322160S/GS-60/-70

Advanced Information

•

2 097 152 words by 32-Bit organization (alternative 4 194 304 words by 16-Bit)

Fast access and cycle time

60 ns access time

110 ns cycle time (-60 version)

70 ns access time

130 ns cycle time (-70 version)

Fast page mode capability with

40 ns cycle time (-60 version)

45 ns cycle time (-70 version)

Single + 5 V (± 10 %) supply

Low power dissipation

max. 4840 mW active (-60 version)

max. 4400 mW active (-70 version)

CMOS – 88 mW standby

TTL – 176 mW standby

CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

8 decoupling capacitors mounted on substrate

All inputs, outputs and clocks fully TTL compatible

72 pin double-sided Single in-Line Memory Module with 25.4 mm (1000 mil) height

Utilizes sixteen 1M

4 DRAMs in 300 mil SOJ packages

1024 refresh cycles / 16 ms

Optimized for use in byte-write non-parity applications

Tin-Lead contact pads (S- version)

Gold contact pads (GS - version)

•

Semiconductor Group

9.94

HYM322160S-60 Related Products

	HYM322160S-60	HYM322160S-70	HYM322160GS-60	HYM322160GS-70
Description	Fast Page DRAM Module, 2MX32, 60ns, CMOS, SIMM-72	Fast Page DRAM Module, 2MX32, 70ns, CMOS, SIMM-72	Fast Page DRAM Module, 2MX32, 60ns, CMOS, SIMM-72	Fast Page DRAM Module, 2MX32, 70ns, CMOS, SIMM-72
Parts packaging code	SIMM	SIMM	SIMM	SIMM
package instruction	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72
Contacts	72	72	72	72
Reach Compliance Code	unknown	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE
Maximum access time	60 ns	70 ns	60 ns	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width	16	16	16	16
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XSMA-N72	R-XSMA-N72	R-XSMA-N72	R-XSMA-N72
memory density	67108864 bit	67108864 bit	67108864 bi	67108864 bi
Memory IC Type	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE
memory width	32	32	32	32
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	72	72	72	72
word count	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	2MX32	2MX32	2MX32	2MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	SIMM	SIMM	SIMM	SIMM
Encapsulate equivalent code	SSIM72	SSIM72	SSIM72	SSIM72
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	1024	1024	1024	1024
Maximum seat height	25.4 mm	25.4 mm	25.4 mm	25.4 mm
self refresh	NO	NO	NO	NO
Maximum standby current	0.016 A	0.016 A	0.016 A	0.016 A
Maximum slew rate	0.88 mA	0.8 mA	0.88 mA	0.8 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maker	Infineon	-	Infineon	Infineon

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