|
3N253 |
2KBP005M_10 |
2KBP10M |
| Description |
2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE |
2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE |
2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| Is it Rohs certified? |
conform to |
- |
conform to |
| package instruction |
PLASTIC, KBPM, 4 PIN |
- |
R-PSIP-W4 |
| Contacts |
4 |
- |
4 |
| Reach Compliance Code |
_compli |
- |
_compli |
| ECCN code |
EAR99 |
- |
EAR99 |
| Other features |
UL RECOGNIZED |
- |
UL RECOGNIZED |
| Minimum breakdown voltage |
50 V |
- |
1000 V |
| Configuration |
BRIDGE, 4 ELEMENTS |
- |
BRIDGE, 4 ELEMENTS |
| Diode component materials |
SILICON |
- |
SILICON |
| Diode type |
BRIDGE RECTIFIER DIODE |
- |
BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) |
1.1 V |
- |
1.1 V |
| JESD-30 code |
R-PSIP-W4 |
- |
R-PSIP-W4 |
| JESD-609 code |
e3 |
- |
e3 |
| Maximum non-repetitive peak forward current |
60 A |
- |
60 A |
| Number of components |
4 |
- |
4 |
| Phase |
1 |
- |
1 |
| Number of terminals |
4 |
- |
4 |
| Maximum operating temperature |
150 °C |
- |
150 °C |
| Minimum operating temperature |
-55 °C |
- |
-55 °C |
| Maximum output current |
2 A |
- |
2 A |
| Package body material |
PLASTIC/EPOXY |
- |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
- |
RECTANGULAR |
| Package form |
IN-LINE |
- |
IN-LINE |
| Peak Reflow Temperature (Celsius) |
NOT APPLICABLE |
- |
NOT SPECIFIED |
| Maximum power dissipation |
4.7 W |
- |
4.7 W |
| Certification status |
Not Qualified |
- |
Not Qualified |
| Maximum repetitive peak reverse voltage |
50 V |
- |
1000 V |
| surface mount |
NO |
- |
NO |
| Terminal surface |
Matte Tin (Sn) |
- |
Matte Tin (Sn) |
| Terminal form |
WIRE |
- |
WIRE |
| Terminal location |
SINGLE |
- |
SINGLE |
| Maximum time at peak reflow temperature |
NOT APPLICABLE |
- |
NOT SPECIFIED |
| Base Number Matches |
1 |
- |
1 |