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DFB2560

Description
25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size341KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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DFB2560 Overview

25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

DFB2560 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTS6P
package instructionGREEN, PLASTIC, TS-6P, 4 PIN
Contacts4
Manufacturer packaging code4LD, TS6P, THROUGH-HOLE, MOLDED PACKAGE
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage600 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSFM-T4
JESD-609 codee3
Maximum non-repetitive peak forward current350 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DFB2505 - DFB25100 — Glass Passivated Bridge Rectifiers
March 2011
DFB2505 - DFB25100
Glass Passivated Bridge Rectifiers
Features
UL certificate # E326243
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction
Plastic material has Underwriters Laboratory Flammability Classification 94V-0
Surge overload rating to 350 amperes peak
High case dielectric strength of 2500 V
RMS
Isolated voltage from case to lead over 2500 volts
+ ~
~
-
TS-6P
Absolute Maximum Ratings*
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Value
DFB25 DFB25 DFB25 DFB25 DFB25 DFB25 DFB25
Units
05***
10***
20***
40
60
80*** 100***
50
35
50
100
70
100
200
140
200
400
280
400
25
350
6
-55 to +150
-55 to +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
°C/W
°C
°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
R
θJC
T
J
T
STG
Maximum
Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum
Average Forward Rectified Current
Peak Forward Surge Current
(8.3mS Single Half-wave)
Typical Thermal Resistance**
Operating Temperature Range
Storage Temperature Range
* Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%
** Device mounted on 4" x 6" x 0.25" Al-plate heat sink.
*** In development. Please contact Fairchild Semiconductor for more information.
Electrical Characteristics
Symbol
V
F
I
R
I
2
t
Cj
T
A
= 25°C unless otherwise specified
Parameter
Maximum
Instantaneous Forward Voltage
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Rating for fusing (t < 8.3mS)
Typical Junction Capacitance per leg*
Test condition
@ 12.5A
@ 25A
@ T
A
= 25°C
@ T
A
= 125°C
Value
1.0
1.1
10
500
508
110
Unit
V
μA
A
2
S
pF
* Measured at 1MHz and applied Reverse bias of 4.0V DC.
© 2011 Fairchild Semiconductor Corporation
DFB2505 - DFB25100 Rev. A4
1
www.fairchildsemi.com

DFB2560 Related Products

DFB2560 DFB2580 DFB2520
Description 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Brand Name Fairchild Semiconduc Fairchild Semiconduc Fairchild Semiconduc
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Parts packaging code TS6P TS6P TS6P
package instruction GREEN, PLASTIC, TS-6P, 4 PIN GREEN, PLASTIC, TS-6P, 4 PIN GREEN, PLASTIC, TS-6P, 4 PIN
Contacts 4 4 4
Manufacturer packaging code 4LD, TS6P, THROUGH-HOLE, MOLDED PACKAGE 4LD, TS6P, THROUGH-HOLE, MOLDED PACKAGE 4LD, TS6P, THROUGH-HOLE, MOLDED PACKAGE
Reach Compliance Code _compli _compli _compli
ECCN code EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 600 V 800 V 200 V
Shell connection ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609 code e3 e3 e3
Maximum non-repetitive peak forward current 350 A 350 A 350 A
Number of components 4 4 4
Phase 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 25 A 25 A 25 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 800 V 200 V
surface mount NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1
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